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PDF NTE5424 Data sheet ( Hoja de datos )
| Número de pieza | NTE5424 | |
| Descripción | Silicon Controlled Rectifier (SCR) for TV Power Supply Switching | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE5424
Silicon Controlled Rectifier (SCR)
for TV Power Supply Switching
Description:
The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high–speed
switching applications such as power inverters, switching regulators, and high–current pulse applica-
tions. This device features fast turn–off, high dv/dt, and high di/dt characteristics and may be used
at frequencies up to 25kHz.
Features:
D Fast Turn–Off Time
D High di/dt and dv/dt Capabilities
D Shorted–Emitter Gate–Cathode Construction
D Low Thermal Resistance
D Center–Gate Construction
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
RMS On–State Current (TC = +60°C, t1/t2 = 0.5), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A
Average On–State Current (TC = +60°C, t1/t2 = 0.5), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Peak Surge (Non–Repetitive) On–State Current (One Cycle), ITSM
60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75A
Peak Forward Gate Power Dissipation (10µs max, Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . 13W
Peak Reverse Gate Power Dissipation (10µs max, Note 2), PRGM . . . . . . . . . . . . . . . . . . . . . . . 13W
Average Gate Power Dissipation (10ms max, Note 2), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Rate of Change of On–State Current VDM = 400V, IGT = 500mA, tr = 0.5µs), di/dt . . . . . . . 200A/µs
Fusing Current (TC = +60°C, 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26A2s
Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Lead Temperature (During Soldering, 10sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +225°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively
biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the max-
imum is permitted.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE5424.PDF ] | |
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