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NTE5429 PDF даташит

Спецификация NTE5429 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Controlled Rectifier (SCR) 7 Amp».

Детали детали

Номер произв NTE5429
Описание Silicon Controlled Rectifier (SCR) 7 Amp
Производители NTE
логотип NTE логотип 

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NTE5429 Даташит, Описание, Даташиты
NTE5427 thru NTE5429
Silicon Controlled Rectifier (SCR)
7 Amp
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +110°C), VRRM
NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +110°C), VDRM
NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +80°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . . 7A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 80A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Peak Off–State Current
Maximum On–State Voltage
DC Holding Current
DC Gate–Trigger Current
DC Gate–Trigger Voltage
Gate Controlled Turn–On Time
I2t for Fusing Reference
IRRM
IDRM
VTM
IHOLD
IGT
VGT
tgt
I2t
VRRM = Max, VDRM = Max,
TC = +110°C, RGK = 1k
IT = 7A
VD = 6VDC, RL = 100
VD = 6VDC, RL = 100
IG x 3GT
For SCR Protection
Critical Rate of Off–State Voltage dv/dt Gate Open, TC = +100°C
(critical)
Min Typ Max Unit
– – 1 mA
– – 1 mA
––2
V
– – 50 mA
– – 25 mA
– – 1.5 V
– 2 – µs
– – 2.6 A2sec
– 100 – V/µs









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NTE5429 Даташит, Описание, Даташиты
.250
(6.35)
Max
1.500
(38.1)
Min
.352 (8.95) Dia Max
.325 (8.13) Dia Max
Cathode
45°
.019 (0.5)
Gate
Anode
.031 (.793)










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