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PDF NTE5440 Data sheet ( Hoja de datos )
| Número de pieza | NTE5440 | |
| Descripción | Silicon Controlled Rectifier (SCR) 800V / 10A / Isolated Tab | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE5440 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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NTE5440
Silicon Controlled Rectifier (SCR)
800V, 10A, Isolated Tab
Applications:
D Temperature Control
D Motor Control
D Transformerless Power Supply Regulators
D Relay and Coil Pulsing
D Power Supply Crowbar Protection
Absolute Maximum Ratings:
Anode to Cathode
Non–Repetitive Peak Voltages (t ≤ 10ms, Note 1), VDSM, VRSM . . . . . . . . . . . . . . . . . . . . . . 800V
Repetitive Peak Voltages (δ ≤ 0.01), VDRM, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Peak Working Voltages, VDWM, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Continuous Voltages, VD, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Average On–State Current, IT(AV)
(Averaged over any 20ms period) up to Th = +74°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7A
RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Repetitive Peak On–State Current, ITRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A
Non–Repetitive Peak On–State Current, ITSM
(t = 10ms, Half–Sinewave, TJ = +110°C prior to surge, with Reapplied VRWMmax) . 100A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A2s
Rate of Rise of On–State Current after Triggering, dIT/dt
(IG = 50mA to IT = 20A, dIG/dt = 50mA/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
Gate to Cathode
Reverse Peak Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Average Power Dissipation (Averaged over any 20ms period), PG(AV) . . . . . . . . . . . . . . . 500mW
Peak Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Temperatures
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Maximum Lead Temperature (During Soldering, less than 5sec) . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Although not recommended, higher Off–State voltages may be applied without damage, but
the thyristor may switch into the On–State. The Rate–of–Rise of On–State current should
not exceed 15A/µs.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet NTE5440.PDF ] | |
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