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NTE5466 PDF даташит

Спецификация NTE5466 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Controlled Rectifier (SCR) 10 Amp».

Детали детали

Номер произв NTE5466
Описание Silicon Controlled Rectifier (SCR) 10 Amp
Производители NTE
логотип NTE логотип 

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NTE5466 Даташит, Описание, Даташиты
NTE5461 thru NTE5468
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–
wave AC control applications such as motor controls, heating controls, and power supplies; or wher-
ever half–wave silicon gate–controlled, solid–state devices are needed. These devices are supplied
in a TO220 type package.
Features;
D Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation,
and Durability
D Blocking Voltage to 800 Volts
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off–State Voltage (Note 1), VRRM, VDRM
NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Non–Repetitive Peak Reverse Voltage; Non–Repetitive Off–State Voltage, VRSM, VDSM
NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125V
NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
RMS Forward Current (All Conducting Angles, TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, TC = +80°C), ITSM . . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (TJ = –65° to +100°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . 40A2s
Forward Peak gate Power (t 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Note 1. VDRM and VRRM for all types can be applied on a continuous DC basis without incurring dam-
age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode.









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NTE5466 Даташит, Описание, Даташиты
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Forward or Reverse Blocking
Current
IDRM, Rated VDRM or VRRM
IRRM
TC = +25°C
TC = +100°C
10 µA
2 mA
Instantaneous OnState Voltage
VT ITM = 30A(Peak), Pulse Width 1ms,
Duty Cycle 2%
1.7 2.0 V
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
IGT VD = 12V, RL = 30
VGT VD = 12V, RL = 30
8 15 mA
0.9 1.5 V
Holding Current
Gate Controlled TurnOn Time
Circuit Commutated TurnOff Time
Critical RateofRise of OffState
Voltage
IH
tgt
tq
dv/dt
Gate Open, VD = 12V, IT = 150mA
VD = Rated VDRM, ITM = 2A, IGR = 80mA
VD = VDRM, ITM = 2A, Pulse Width = 50µs,
dv/dt = 200V/µs, di/dt = 10A/µs,
TC = +75°C
VD = Rated VDRM, Exponential Rise,
TC = +100°C
10 20 mA
1.6 µs
25 µs
100 V/µs
.147 (3.75)
Dia Max
.420 (10.67)
Max
Anode
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
Anode










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