DataSheet26.com

NTE5498 PDF даташит

Спецификация NTE5498 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Controlled Rectifier (SCR) 12 Amp».

Детали детали

Номер произв NTE5498
Описание Silicon Controlled Rectifier (SCR) 12 Amp
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE5498 Даташит, Описание, Даташиты
NTE5498 & NTE5499
Silicon Controlled Rectifier (SCR)
12 Amp
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Peak Repetitive Off–State Voltage (TJ = –40° to +125°C, RGK = 1k), VDRM, VRRM
NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (All Conduction Angles, TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 12A
Average On–State Current (Half Cycle, 180° Conduction Angle, TC = +85°C), IT(AV) . . . . . . . . 7.6A
Non–Repetitive On–State Current (Half Cycle, 60Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A
Non–Repetitive On–State Current (Half Cycle, 50Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Circuit Fusing Considerations (Half Cycle, t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A2s
Peak Gate Current (10µs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate Dissipation (10µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Off–State Leakage Current
On–State Voltage
On–State Threshold Voltage
On–State Slope Resistance
IDRM,
IRRM
VT
VT(TO)
rT
VDRM + VRRM, RGK = 1k
IT = 24A, TJ = +25°C
TJ = +125°C
TJ = +125°C
TJ = +125°C
TJ = +25°C
Gate–Trigger Current
IGT VD = 7V
Gate–Trigger Voltage
VGT VD = 7V
Min Typ Max
– – 1.5
– – 5.0
– – 1.8
– – 1.0
– – 36
5 – 10
– – 2.0
Unit
mA
µA
V
V
m
mA
V









No Preview Available !

NTE5498 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Holding Current
IH RGK = 1k
– – 40 mA
Latching Current
IL RGK = 1k
– – 30 mA
Critical Rate of Voltage Rise dv/dt VD = .67 x VDRM, RGK = 1k, TJ = +125°C 100 – – V/µs
Critical Rate of Current Rise di/dt IG = 50mA, diG/dt = 0.5A/µs, TJ = +125°C 100 – – A/µs
Gate Controlled Delay Time tgd IG = 50mA, diG/dt = 0.5A/µs
– – 500 ns
Commutated TurnOff Time tq VD = .67 x VDRM, VR = 35V, IT = IT(AV),
TC = +85°C
– – 50 µs
.147 (3.75)
Dia Max
.420 (10.67)
Max
Anode
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
Anode










Скачать PDF:

[ NTE5498.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE5491Silicon Controlled Rectifier (SCR) 10 AmpNTE
NTE
NTE5496Silicon Controlled Rectifier (SCR) 10 AmpNTE
NTE
NTE5498Silicon Controlled Rectifier (SCR) 12 AmpNTE
NTE
NTE5499Silicon Controlled Rectifier (SCR) 12 AmpNTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск