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PDF NTE5513 Data sheet ( Hoja de datos )
| Número de pieza | NTE5513 | |
| Descripción | Silicon Controlled Rectifier (SCR) 5 Amp | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE5513 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE5511 thru NTE5513
Silicon Controlled Rectifier (SCR)
5 Amp
Description:
The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are in-
tended for use in power–control and power–switching applications. These devices are available in
a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating
of 5A (rms value) at a case temperature of +75°C.
Features:
D Designed Especially for High–Volume Systems
D Readily Adaptable for PC Boards and Metal
Heat Sinks
D Low Switching Losses
D High di/dt and dv/dt Capabilities
D Shorted Emitter Gate–Cathode Construction
D Forward and Reverse Gate Dissipation Ratings
D All–Diffused Construction Assures Exceptional
Uniformity and Stability of Characteristics
D Direct–Soldered Internal Construction Assures
Exceptional Resistance to Fatigue
D Symmetrical Gate–Cathode Construction Pro-
vides Uniform Current Density, Rapid Electrical
Conduction, and Efficient Heat Dissipation
D All–Welded Construction and Hermetic Sealing
D Low Leakage Currents, Forward and Reverse
D Low Forward Voltage Drop at High Current
Levels
D Low Thermal Resistance
Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency
between 50Hz and 400Hz, and with Resistive or Inductive Load)
Transient Peak Reverse Voltage (Non–Repetitive), VRM (non–rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Peak Reverse Voltage (Repetitive), VRM (rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Peak Forward Blocking Voltage (Repetitive), VFBOM (rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Average DC Forward Current, IF(av)
(TC = +75°C mounted on heat sink, conduction angle or 180°) . . . . . . . . . . . . . . . . . . . . 3.2A
RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak Surge Current (For one cycle of applied voltage), iFM(surge) . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Sub–Cycle Surge (Non–Repetitive, for a period of 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . 15A2sec
Rate of Change of Forward Current (Note 1), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs
Gate Power (Peak, Forward, or Reverse, for 10µs duration, Note 2), PGM . . . . . . . . . . . . . . . . 13W
Average Gate Power (Note 2), PGAV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5µs rise time
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is
permissible.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE5513.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTE5511 | Silicon Controlled Rectifier (SCR) 5 Amp | NTE |
| NTE5513 | Silicon Controlled Rectifier (SCR) 5 Amp | NTE |
| NTE5514 | Silicon Controlled Rectifier (SCR) | NTE |
| NTE5516 | Silicon Controlled Rectifier (SCR) | NTE |
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