DataSheet26.com

NTE552 PDF даташит

Спецификация NTE552 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Rectifier General Purpose / Fast Recovery».

Детали детали

Номер произв NTE552
Описание Silicon Rectifier General Purpose / Fast Recovery
Производители NTE
логотип NTE логотип 

1 Pages
scroll

No Preview Available !

NTE552 Даташит, Описание, Даташиты
NTE552
Silicon Rectifier
General Purpose, Fast Recovery
Features:
D Low Cost
D Low Leakage
D Low Forward Voltage Drop
D High Current Capability
D Supplied in DO41 Package
Maximum Ratings and Electrical Characteristics:
(Ratings at 26°C ambient temperature unless otherwise noted. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%)
Maximum Recurrent Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Maximum RMS Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V
Maximum DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Maximum Average Forward Rectified Current (.375” (9.5mm) Lead Length at TA = +75°C) . . . . 1A
Peak Forward Surge Current (8.3ms Single Half Sine–Wave Superimposed on Rated Load) . 50A
Maximum Instantaneous Forward Voltage at 1A DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2V
Maximum DC Reverse Current at Rated DC Blocking Voltage (TA = +25°C) . . . . . . . . . . . . . . 5.0µA
Maximum Full Load Reverse Current
(Full Cycle Average (.375” (9.5mm) Lead Length at TL = +55°C) . . . . . . . . . . . . . . . . . . 100µA
Maximum Reverse Recovery Time (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200nS
Typical Junction Capacitance (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15pF
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Note 1. Reverse Recovery Test Conditions: IF = 1A, VR = 30V
Note 2. Measured at 1MHz and applied reverse voltage of 4 volts.
1.100
(27.94)
Min
.210 (5.33)
Max
.034 (0.87) Dia Max
.107 (2.72) Dia Max
Color Band Denotes Cathode










Скачать PDF:

[ NTE552.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE55Silicon Complementary TransistorsNTE
NTE
NTE5500Silicon Controlled Rectifier (SCR) 16 AmpNTE
NTE
NTE5509Silicon Controlled Rectifier (SCR) 16 AmpNTE
NTE
NTE5511Silicon Controlled Rectifier (SCR) 5 AmpNTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск