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PDF NTE555 Data sheet ( Hoja de datos )
| Número de pieza | NTE555 | |
| Descripción | Silicon Pin Diode UHF/VHF Detector | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE555
Silicon Pin Diode
UHF/VHF Detector
Description:
The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily
adaptable to may other fast switching RF and digital applications.
Features:
D Schottky Barrier Construction Provides Stable Characteristics by Eliminating
the “Cat–Whisker” or “S–Bend” Contact
D Very Low Capacitance: 1.0pF
D Extremely Low Minority Carrier Lifetime: 100ps (Max)
D High Reverse Voltage: VR = 50V
D Low Reverse Leakage Current: IR = 200nA (Max)
Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated)
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Forward Power Dissipation (TA = 25°C), PF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C, unless otherwise indicated)
Parameter
Symbol
Test Conditions
Reverse Breakdown Voltage
Diode Capacitance
Minority Carrier Lifetime
Reverse Leakage Current
Forward Voltage
Case Capactiance
V(BR)R
CT
r
IR
VF
CC
IR = 10µA
VR = 20V, f = 1MHz
IF = 5mA, Krakauer Method
VR = 25V
IF = 10mA
f = 1MHz
Min Typ Max Unit
50 – – V
– 0.48 1.0 pF
– 15 100 ps
– 7 200 nA
– 1.0 1.2 V
– 0.1 – pF
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE555.PDF ] | |
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