NTE5564 PDF даташит
Спецификация NTE5564 изготовлена «NTE» и имеет функцию, называемую «Silicon Controlled Rectifiers (SCRs)». |
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Детали детали
Номер произв | NTE5564 |
Описание | Silicon Controlled Rectifiers (SCRs) |
Производители | NTE |
логотип |
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NTE5562, NTE5564, NTE5566
Silicon Controlled Rectifiers (SCR’s)
Description:
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud
TO–48 type package designed for industrial and consumer applications such as power supplies, bat-
tery chargers, temperature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM
NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Peak Surge (Non–Repetitive) On–State Current, ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Peak Gate–Power Dissipation (IGT ≤ for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Temperature Range, Toper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDRM, TJ = +100°C, Gate Open, VDRM &VRRM
IRRM
–
– 2.0 mA
Maximum On–State Voltage (Peak)
VTM TC = +25°C
– – 1.6 V
DC Holding Current
IHO TC = +25°C, Gate Open
– – 50 mA
DC Gate Trigger Current
IGT Anode Voltage = 12Vdc, RL = 30Ω,
TC =+ 25°C
– – 30 mA
DC Gate Controlled Turn–On Time
TGT IGT = 150mA , tD+tR
– 2.5 – µs
Critical Rate of Rise of Off–State Voltage Critical TC = +100°C, Gate Open
dv/dt
– 100 – V/µs
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.562
(14.28)
Max
1.260
(32.0)
Max
.445
(11.3)
Max
Cathode
Anode
Gate
.595
(15.1)
Max
1/4–28 UNF–2A
Isolated Stud
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Номер в каталоге | Описание | Производители |
NTE5562 | Silicon Controlled Rectifiers (SCRs) | NTE |
NTE5564 | Silicon Controlled Rectifiers (SCRs) | NTE |
NTE5566 | Silicon Controlled Rectifiers (SCRs) | NTE |
NTE5567 | Silicon Controlled Rectifier (SCR) for Phase Control Applications | NTE |
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Vishay |
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STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |