NTE56040 PDF даташит
Спецификация NTE56040 изготовлена «NTE Electronics» и имеет функцию, называемую «TRIAC / 4A Sensitive Gate». |
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Детали детали
Номер произв | NTE56040 |
Описание | TRIAC / 4A Sensitive Gate |
Производители | NTE Electronics |
логотип |
2 Pages
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NTE56040 & NTE56041
TRIAC, 4A Sensitive Gate
Description:
The NTE56040 and NTE56041 are glass passivated, sensitive gate TRIACs in a TO220 type package
designed for use in general purpose bidirectional switching and phase control applications, where
high sensitivity is required in all four quadrants.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE56041 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the On–State. The rate–of–rise of current should not exceed
3A/µs.
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Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G (–)
MT2 (–), G (–)
MT2 (–), G (+)
Latching Current
MT2 (+), G (+)
MT2 (+), G (–)
MT2 (–), G (–)
MT2 (–), G (+)
Holding Current
On–State Voltage
Gate Trigger Voltage
Off–State Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A
IL VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 5A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID VD = VDRMmax, TJ = +125°C
Critical Rate–of–Rise of
Off–State Voltage
dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
Gate Controlled Turn–On Time
tgt ITM = 6A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
Min Typ Max Unit
– 2.5 10 mA
– 4.0 10 mA
– 5.0 10 mA
– 11 25 mA
– 3.0 15 mA
– 10 20 mA
– 2.5 15 mA
– 4.0 20 mA
– 2.2 15 mA
– 1.4 1.7 V
– 0.7 1.5 V
0.25 0.4 –
V
– 0.1 0.5 mA
– 50 – V/µs
– 2 – µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
MT2
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2
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