DataSheet26.com

NTE56068 PDF даташит

Спецификация NTE56068 изготовлена ​​​​«NTE Electronics» и имеет функцию, называемую «TRIAC / 16A / High Commutation».

Детали детали

Номер произв NTE56068
Описание TRIAC / 16A / High Commutation
Производители NTE Electronics
логотип NTE Electronics логотип 

2 Pages
scroll

No Preview Available !

NTE56068 Даташит, Описание, Даташиты
NTE56068 & NTE56069
TRIAC, 16A, High Commutation
Description:
The NTE56068 and NTE56069 are glass passivated, high commutation TRIACs in an isolated full–
pack type package designed for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. These devices will commutate the full rated RMS current at the maximum rated junction
temperature, without the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56068 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56069 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, THS 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.









No Preview Available !

NTE56068 Даташит, Описание, Даташиты
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Latching Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Holding Current
OnState Voltage
Gate Trigger Voltage
OffState Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A, Note 2
IL VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 20A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID VD = VDRMmax, TJ = +125°C
Critical RateofRise of
OffState Voltage
dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
Critical RateofChange of
Commutating Current
dIcom/dt VDM = 400V, TJ = +125°C, ITRMS = 16A,
without Snubber, Gate Open
Gate Controlled TurnOn Time
Isolation Characteristics
tgt ITM = 20A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
RMS Isolation Voltage from All
3 Pins to External Heatsink
VISOL f = 50 60Hz, Sinusoidal Waveform,
R.H. 65%, Clean and Dustfree
Capacitance from T2 to
External Heatsink
CISOL f = 1MHz
Min
2
2
2
0.25
1000
Typ
18
21
34
31
34
30
31
1.2
0.7
0.4
0.1
4000
28
2
10
Max
50
50
50
60
90
60
60
1.5
1.5
0.5
2500
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
µs
V
pF
Note 2. Device does not trigger in the MT2 (), G (+) quadrant.
.181 (4.6) Max
.114 (2.9)
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
MT2
.118
(3.0)
Max
.531
(13.5)
Min
MT1
G
.098 (2.5)
.100 (2.54)










Скачать PDF:

[ NTE56068.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE5606(NTE5600 - NTE5607) TRIACNTE Electronics
NTE Electronics
NTE5606(NTE5600 - NTE5607) TRIACNTE Electronics
NTE Electronics
NTE56060TRIAC / 16ANTE Electronics
NTE Electronics
NTE56063TRIAC / 8A / High CommutationNTE Electronics
NTE Electronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск