NTE5645 PDF даташит
Спецификация NTE5645 изготовлена «NTE Electronics» и имеет функцию, называемую «TRIAC - 10A Isolated Tab». |
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Детали детали
Номер произв | NTE5645 |
Описание | TRIAC - 10A Isolated Tab |
Производители | NTE Electronics |
логотип |
2 Pages
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NTE5645
TRIAC – 10A
Isolated Tab
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 180°C), IT(RMS) . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 100A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDRM VDRM = 600V, Gate Open, TJ = +100°C – – 2 mA
Max. On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
VTM
IH
Critical
dv/dt
IT = 14A
Gate Open
VD = 600V, Gate Open, TC = +100°C
– – 2.2 V
– – 50 mA
– 5 – V/µs
DC Gate Trigger Current
T2 (+) Gate (+), T2 (–) Gate (–)
T2 (+) Gate (–), T2 (–) Gate (+)
IGT VD = 12V, RL = 30Ω
– – 50 mA
– – 80 mA
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Electrical Characteristics (Cont’d): (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Gate Trigger Voltage
VGT VD = 12V, RL = 30Ω
– – 2.5 V
Gate–Controlled Turn–On Time
tgt
VD = 600V, IGT = 80mA, tr = 0.1µs,
– 2.5 – µs
iT = 10A (Peak)
.147 (3.75)
Dia Max
.420 (10.67)
Max
Isolated
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2
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Номер в каталоге | Описание | Производители |
NTE5640 | TRIAC / 2.5A | NTE Electronics |
NTE5643 | TRIAC / 2.5A | NTE Electronics |
NTE5645 | TRIAC - 10A Isolated Tab | NTE Electronics |
NTE5646 | TRIAC - Internally Triggered | NTE Electronics |
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