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Спецификация NTE5661 изготовлена «NTE Electronics» и имеет функцию, называемую «TRIAC / 10 Amp». |
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Детали детали
Номер произв | NTE5661 |
Описание | TRIAC / 10 Amp |
Производители | NTE Electronics |
логотип |
2 Pages
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NTE5661
TRIAC, 10 Amp
Description:
The NTE5661 is a TRIAC in a TO64 type stud mount package designed primarily for full–wave AC
control applications such as light dimmers, motor controls, heating controls, power supplies or wher-
ever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch
from a blocking to a conducting state for either polarity of applied anode voltage with positive or nega-
tive gate triggering.
Features:
D Low “ON” Voltage
D Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
On–State RMS Current (TC = +75°C), ITRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Surge Current (One Full Cycle, 60Hz, TJ = –40° to +100°C), ITSM . . . . . . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (TJ = –40° to +100°C, t = 1.0 to 8.3ms), I2t . . . . . . . . . . . . . . 40A2sec
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb.
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Blocking Current (Either Direction) IDRM VDRM = 50V, TJ = +100°C, Gate Open – – 2.0 mA
On–State Voltage (Either Direction)
Gate Trigger Current, Continuous DC
All Modes
VTM ITM = 14A Peak
IGT
Main Terminal Voltage = 12V, RL = 100Ω
– 1.3 1.8 V
– – 40 mA
MT2 (+), G (+); MT2 (–), G (–)
Gate Trigger Voltage, Continuous DC
– – 50 mA
VGT Main Terminal Voltage = 12V, RL = 100Ω – 0.9 2.0
VGD Main Terminal Voltage = 50V, RL = 100Ω, 0.2 –
TJ = +100°C
–
V
V
Holding Current (Either Direction)
IH Main Terminal Voltage = 12V,
Gate Open, Initiating Current = 100mA
– – 30 mA
Turn–On Time
Blocking Voltage Application Rate
at Commutation
ton ITM = 14A, IGT = 100mA
dv/dt VDRM = 50V, TJ = +75°C, Gate Open
– 1.5 – µs
– 5.0 – V/µs
.431
(10.98
Max
Gate
.855
(21.7)
Max
.453
(111.5)
Max
MT1
.125 (3.17) Max
MT2
10–32 UNF–2A
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Номер в каталоге | Описание | Производители |
NTE5661 | TRIAC / 10 Amp | NTE Electronics |
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