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NTE578 PDF даташит

Спецификация NTE578 изготовлена ​​​​«NTE Electronics» и имеет функцию, называемую «Silicon Rectifier Schottky Barrier / General Purpose».

Детали детали

Номер произв NTE578
Описание Silicon Rectifier Schottky Barrier / General Purpose
Производители NTE Electronics
логотип NTE Electronics логотип 

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NTE578 Даташит, Описание, Даташиты
NTE578
Silicon Rectifier
Schottky Barrier, General Purpose
Description:
The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide
passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–fre-
quency inverters, free wheeling diodes, and polarity protection diodes.
Features:
D Low Reverse Current
D Low Stored Charge, Majority Carrier Conduction
D Low Power Loss/High Efficiency
D Highly Stable Oxide Passivated Junction
D Guard–Ring for Stress Protection
D Low Forward Voltage
D 150°C Operating Junction Temperature
D High Surge Capacity
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Average Rectified Forward Current, IO
(VR (equiv) 0.2VR(dc), RθJA = 50°C/W, P.C. Board Mounting, TA = +120°C) . . . . . . . . . 1A
Nonrepetitive Peak Surge Current, IFSM
(Surge applied at rated load conditions, half–wave single phase, 60Hz) . . . . . . . . . . . . . 25A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Voltage Rate of Change (Rated VR), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Electrical Characteristics: (TL = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions
Min Typ Max Unit
Maximum Instanteous Forward Voltage
Maximum Instanteous Reverse Current
VF IF = 1A, Note 1
IR VR = 90V, TL = +25°C
VR = 90V, TL = +100°C –
– 0.6 V
– 0.5 mA
– 5.0 mA
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle 2.0%.









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NTE578 Даташит, Описание, Даташиты
1.100
(27.94)
Min
.210
(5.33)
Max
.034 (0.87) Dia Max
Color Band Denotes Cathode
.107 (2.72)
Dia Max










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