NTE5864 PDF даташит
Спецификация NTE5864 изготовлена «NTE Electronics» и имеет функцию, называемую «Silicon Power Rectifier Diode / 25 Amp». |
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Детали детали
Номер произв | NTE5864 |
Описание | Silicon Power Rectifier Diode / 25 Amp |
Производители | NTE Electronics |
логотип |
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NTE5864 thru NTE5889
Silicon Power Rectifier Diode, 25 Amp
Description:
The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed
with very low leakage current as well as good surge handling capability. These devices are ideal for
use in applications where economy, power capability, and reliability are demanding considerations.
Ratings and Characteristics:
Peak Reverse Voltage, PRV
NTE5864, NTE5865* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5884, NTE5885* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5888, NTE5889* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Maximum Forward Current (Single Phase, Half Wave, TC = +121°C), IF(AV) . . . . . . . . . . . . . . . . 30A
Maximum Forward Surge Current (Single Cycle Amps), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A
Maximum Forward Voltage Drop (IO = 30A, TC = +25°C), VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2V
Maximum Reverse Current (FCA at +150°C), IR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Fusing Current (Less than 8ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A2s
Reverse Power for Bulk Avalanche . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 Joules
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +190°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0°C/W
Note 1. Standard polarity is cathode to case, (*) indicated anode to case.
.437
(11.1)
Max
.250 (6.35) Max
.060 (1.52)
Dia Min
.175 (4.45) Max
10–32 NF–2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max
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Номер в каталоге | Описание | Производители |
NTE586 | Silicon Rectifier Diode Schottky Barrier / Fast Switching | NTE Electronics |
NTE5860 | (NTE5850 - NTE5869) Silicon Power Rectifier Diode | NTE Electronics |
NTE5861 | (NTE5850 - NTE5869) Silicon Power Rectifier Diode | NTE Electronics |
NTE5862 | (NTE5850 - NTE5869) Silicon Power Rectifier Diode | NTE Electronics |
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DataSheet26.com | 2020 | Контакты | Поиск |