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NTE64 PDF даташит

Спецификация NTE64 изготовлена ​​​​«NTE Electronics» и имеет функцию, называемую «Silicon NPN Transistor UHF High Speed Switch».

Детали детали

Номер произв NTE64
Описание Silicon NPN Transistor UHF High Speed Switch
Производители NTE Electronics
логотип NTE Electronics логотип 

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NTE64 Даташит, Описание, Даташиты
NTE64
Silicon NPN Transistor
UHF High Speed Switch
Description:
The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise small–signal amplifiers and applications requiring fast switching times.
Features:
D High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA
D Low Noise Figure: NF = 2dB Typ @ f = 1GHz
D High Power Gain: Gpe = 10dB Min @ f = 1GHz
D Third Order Intercept: +23dBm Typ
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.375W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO IC = 1mA, IB = 0
V(BR)CBO IC = 0.1mA, IE = 0
V(BR)EBO IE = 0.1mA, IC = 0
ICBO VCB = 15V, IE = 0
Min Typ Max Unit
15 – – V
25 – – V
2––V
– – 50 nA









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NTE64 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
hFE IC = 5mA, VCE = 5V
30 80 200
Current GainBandwidth Product
fT IC = 15mA, VCE = 10V,
f = 1GHz
4.5 GHz
CollectorBase Capacitance
Noise Figure
Functional Tests
Ccb VCB = 10V, IE = 0, f = 1MHz
0.4 1.0 pF
NF IC = 5mA, VCE = 6V, f = 1GHz 2.0 2.5 dB
CommonEmitter Amplifier Power Gain Gpe VCC = 6V, IC = 5mA, f = 1GHz 10 12 dB
Third Order Intercept
IC = 5mA, VCE = 6V,
f = 0.9GHz
+23 dBm
.075 (1.9) Min
C
Seating Plane
.770
(19.5)
Max
EE
.325
(8.27)
Max
B
.190
(4.83)
Dia
.036 (0.92)










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