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PDF NTE6401 Data sheet ( Hoja de datos )
| Número de pieza | NTE6401 | |
| Descripción | Unijunction Transistor | |
| Fabricantes | NTE Electronics | |
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NTE6401
Unijunction Transistor
Description:
The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 5µA (Max)
D Low Emitter Reverse Current: .005µA (Typ)
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to 125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1 Derate 3mW/°C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2 Capacitor discharge – 10µF or less, 30 volts or less
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Intrinsic Standoff Ratio
η VB2B1 = 10V, Note 3
Interbase Resistance
rBB VB2B1 = 3V, IE = 0
Interbase Resistance Temperature
Coefficient
arBB
Min Typ Max Unit
0.56 – 0.75 –
4.7 7.0 9.1 kΩ
0.1 – 0.9 %/°C
Note 3. Intrinsic standoff ratio, η is defined by equation:
η = VP – VF
VB2B1
where
VP = Peak Point Emitter Voltage
VB2B1 = Interbase Voltage
VF = Emitter to Base–One Junction Diode Drop (∼ 0.45V @ 10µA)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE6401.PDF ] | |
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