DataSheet26.com

NTE6507 PDF даташит

Спецификация NTE6507 изготовлена ​​​​«NTE Electronics» и имеет функцию, называемую «Integrated Circuit NMOS / 8 Bit Microprocessor (MPU) w/On-Chip Clock OSC».

Детали детали

Номер произв NTE6507
Описание Integrated Circuit NMOS / 8 Bit Microprocessor (MPU) w/On-Chip Clock OSC
Производители NTE Electronics
логотип NTE Electronics логотип 

4 Pages
scroll

No Preview Available !

NTE6507 Даташит, Описание, Даташиты
NTE6507
Integrated Circuit
NMOS, 8 Bit Microprocessor (MPU)
w/On–Chip Clock OSC
Description:
The NTE6507 integrated circuit is an 8 bit microprocessor in a 28–Lead DIP type package which pro-
vides a selection of addressable memory range, interrupt input options, and on–chip clock oscillators
and drivers. This device is bus compatible with the MC6800 product offering and is aimed at high
performance, low cost applications where single phase inputs or crystals provide the time base.
Features:
D Single 5V ±5% Power Supply
D N Channel, Silicon Gate, Depletion Load
Technology
D 8 Bit Parallel Processing
D Decimal and Binary Arithmetic
D Thirteen Addressing Modes
D True Indexing Capability
D Programmable Stack Pointer
D Variable Length Stack
D Bi–Directional Data Bus
D Instruction Decoding and Control
D 8k Addressable Bytes of Memory
D “Ready” Input
D Direct Memory Access Capability
D Bus Compatible with MC6800
D On–Board Clock
D 1MHz Operating Frequency
Absolute Maximum Ratings: (Note 1)
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +7.0V
Input Voltage, Vin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +7.0V
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. This device contains input protection against damage due to high static voltages or electric
fields; however, precautions should be taken to avoid application of voltages higher than the
maximum rating.









No Preview Available !

NTE6507 Даташит, Описание, Даташиты
DC Characteristics: (VCC = 5V ±5%, TA = 0° to +70°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Max
Input High Voltage
Logic and o(in)
Logic
Input Low Voltage
Logic and o(in)
Input Loading
RDY
VIH
VIL
IIL Vin = 0V, VCC = 5.25V
+2.0
VCC
VCC0.5 VCC+0.25
0.3 +0.8
10 300
Input Leakage Current
Logic (Excluding RDY)
Iin Vin = 0 to 5.25V, VCC = 0
2.5
o(in)
10.0
ThreeState (Off State) Input Current
DB0DB7
ITSI Vin = 0.4 to 2.4V, VCC = 5.25V
±10
Output High Voltage
DB0DB7, A0A15, R/W
VOH ILOAD = 100µA, VCC = 4.75V
2.4
Output Low Voltage
DB0DB7, A0A15, R/W
VOL ILOAD = 1.6mA, VCC = 4.75V
0.4
Power Dissipation
Capaticance
RES, RDY,
DB0DB7
PD VCC = 5.25V
700
Vin = 0, TA = +25°C, f = 1MHz
Cin
10
15
A0A15, R/W
o(in)
Cout
COo(in)
12
15
Unit
V
V
V
µA
µA
µA
µA
V
V
mW
pF
pF
pF
pF
Dynamic Operating Characteristics: (VCC = 5V ±5%, TA = 0° to +70°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Max Unit
Cycle Time
o(in) Low Time
o(in) High Time
o Neg to 1 Pos Delay
o Neg to 2 Neg Delay
o Pos to 1 Neg Delay
o Pos to 2 Pos Delay
α(in) Rise and Fall Time
1(OUT) Pulse Width
2(OUT) Pulse Width
Delay Between 1 and 2
1 and 2 Rise and Fall Times
TCYC
TLo Note 2
THo Note 2
T01+ Load = 100pF
T02Load = 100pF
T01Load = 100pF
T02+ Load = 100pF
TRO, TFO Note 3
TPWHO1
TPWHO2
TD
TR, TF Load = 1TTL load +30pF, Note 3
1.00
480
460
10
5
5
15
0
TLOo20
TLOo40
5
40
70
65
65
75
30
TLOo
TLOo10
25
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note 2. Measured at 50% points.
Note 3. Measured between 10% and 90% points.









No Preview Available !

NTE6507 Даташит, Описание, Даташиты
Dynamic Operating Characteristics (Contd): (VCC = 5V ±5%, TA = 0 to +70°C unless otherwise
specified)
Parameter
Symbol
Test Conditions
Min Max Unit
R/W Setup Time
R/W Hold Time
Address Setup Time
Address Hold Time
Read Access Time
Read Data Setup Time
Read Data Hold Time
Write Data Setup Time
Write Data Hold Time
Sync Setup Time
Sync Hold Time
RDY Setup Time
TRWS
TRWH
TADS
TADH
TACC
TDSU
THR
TMDS
THW
TSYS
TSYH
TRS
Note 4
225 ns
30 ns
225 ns
30 ns
650 ns
100 ns
10 ns
20 175 ns
60 150 ns
350 ns
30 ns
200 ns
Note 4. RDY must never switch states within TRS to end of 2.
Pin Connection Diagram
RES 1
VSS 2
RDY 3
VCC 4
AB 0 5
AB 1 6
AB 2 7
AB 3 8
AB 4 9
AB 5 10
AB 6 11
AB 7 12
AB 8 13
AB 9 14
28 Ø 2 (Out)
27 Ø 0 (In)
26 R/W
25 DB 0
24 DB 1
23 DB 2
22 DB 3
21 DB 4
20 DB 5
19 DB 6
18 DB 7
17 AB 12
16 AB 11
15 AB 10










Скачать PDF:

[ NTE6507.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE6507Integrated Circuit NMOS / 8 Bit Microprocessor (MPU) w/On-Chip Clock OSCNTE Electronics
NTE Electronics
NTE6508Integrated Circuit CMOS / 1K Static RAM (SRAM)NTE Electronics
NTE Electronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск