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NTE87 PDF даташит

Спецификация NTE87 изготовлена ​​​​«NTE Electronics» и имеет функцию, называемую «Silicon Complementary Transistors High Power Audio / Disk Head Positioner for Linear Applications».

Детали детали

Номер произв NTE87
Описание Silicon Complementary Transistors High Power Audio / Disk Head Positioner for Linear Applications
Производители NTE Electronics
логотип NTE Electronics логотип 

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NTE87 Даташит, Описание, Даташиты
NTE87 (NPN) & NTE88 (PNP)
Silicon Complementary Transistors
High Power Audio, Disk Head Positioner
for Linear Applications
Description:
The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications. These
devices can also be used in power switching circuits such as relay or solenoid drivers, DC–to–DC
converters or inverters.
Features:
D High Safe Operating Area: 1.2A @ 100V
D Completely Characterized for Linear Operation
D High DC Current Gain: hFE = 20 Min @ IC = 2A
D Low Saturation Voltage: 2V
D For Low Distortion Complementry Designs
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Emitter Current, IE
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875°C/W
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +265°C
Note 1. Matched complementary pairs are available upon request (NTE88MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.









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NTE87 Даташит, Описание, Даташиты
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown
VCEO(sus) IC = 100mA, Note 3
ICEO VCE = 250V
ICEX VCE = 250V, VBE(off) = 1.5V
IEBO VEB = 5V
Second Breakdown Collector Current
with Base Forward Bias
ON Characteristics (Note 3)
IS/b VCE = 40V, t = 0.5s (nonrepetitive)
VCE = 100V, t = 0.5s (nonrepetitive)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter On Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
VCE = 2V, IC = 2A
VCE = 2V, IC = 4A
IC = 2A, IB = 200mA
IC = 4A, IB = 400mA
VCE = 2V, IC = 4A
Current GainBandwidth Product
Output Capacitance
fT VCE = 10V, IC = 1A, ftest = 1MHz
Cob VCB = 10V, IE = 0, ftest = 1MHz
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
Min Typ Max Unit
250 – – V
– – 1 mA
– – 500 µA
– – 500 µA
5––A
1.4 – – A
20 100
5––
– – 0.8 V
– – 2.5 V
2V
4 – – MHz
– – 500 pF
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case










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