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Спецификация NTE887M изготовлена «NTE Electronics» и имеет функцию, называемую «Integrated Circuit Low Power / JFET OP Amplifier». |
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Детали детали
Номер произв | NTE887M |
Описание | Integrated Circuit Low Power / JFET OP Amplifier |
Производители | NTE Electronics |
логотип |
3 Pages
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NTE887M
Integrated Circuit
Low Power, JFET OP Amplifier
Description:
The NTE887M is a JFET–input operational amplifier in an 8–Lead DIP type package designed as a
low–power version of the NTE857M amplifier. This device features high input impedance, wide band-
width, high slew rate, and low input offset and bias current.
Features:
D Very Low Power Consumption
D Typical Supply Current: 200µA
D Wide Common–Mode and Differential Voltage Ranges
D Low Input Bias and Offset Currents
D Common–Mode Input Voltage Range Includes VCC+
D Output Short–Circuit Protection
D High Input Impedance: JFET–Input Stage
D Internal Frequency Compensation
D Latch–Up–Free Operation
D High Slew rate: 3.5V/µs Typ
Absolute Maximum Ratings: (TA = 0° to +70°C unless otherwise specified)
Supply Voltage (Note 1), VCC+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18V
Supply Voltage (Note 1), VCC– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18V
Differential Input Voltage (Note 2), VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Input Voltage (Note 1, Note 3), VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Duration of Output Short Circuit (Note 4), ts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited
Continuous Total Dissipation, PD
TA ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW
Derate Above +65°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mW
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 1/16” (1.6mm) from case for 10sec), TL . . . . . . . . . . . +260°C
Note 1. All voltage values, except differential voltages, are with respect to the midpoint between
VCC+ and VCC–.
Note 2. Differential voltages are at the non–inverting input pin with respect to the inverting input pin.
Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whchever is less.
Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages
must be limited to ensure that the dissipation rating is not exceeded.
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Electrical Characteristics: (VCC± = ±15V, Note 5 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Input Offset Voltage
Temperature Coefficient of
Input Offset Voltage
VIO
aVIO
VO = 0,
RS = 50Ω
TA = +25°C
TA = 0° to +70°C
VO = 0, RS = 50Ω, TA = 0° to +70°C
–
–
–
3
–
10
Input Offset Current
Input Bias Current
Common–Mode Input Voltage Range
Maximim Peak Output Voltage Swing
Large–Signal Differential Voltage
Amplification
Unity–Gain Bandwidth
Input Resistance
Common–Mode Rejection Ratio
Supply Volatge Rejection Ratio
(∆VCC±/∆VIO)
Total Power Dissipation
Supply Current
Crosstalk Attenuation
IIO
IIB
VICR
VOM
AVD
B1
ri
CMRR
kSVR
PD
ICC
Vo1/Vo2
VO = 0, Note 6 TA = +25°C
–5
TA = 0° to +70°C –
–
VO = 0, Note 6 TA = +25°C
– 30
TA = 0° to +70°C –
–
TA = +25°C
RL = 10kΩ, TA = +25°C
±11 –12
+15
±10.0 ±13.5
RL ≥ 10kΩ, TA = 0° to +70°C
±10.0 –
VO = ±10V,
RL ≥ 10kΩ
TA = +25°C
TA = 0° to +70°C
3
3
6
–
RL = 10kΩ, TA = +25°C
–1
TA = +25°C
– 1012
VIC = VICRmin, VO = 0, RS = 50Ω, 70 86
TA = +25°C
VCC = ±15V to ±9V, VO = 0,
RS = 50Ω, TA = +25°C
70 95
No Load, VO = 0, TA = +25°C
– 6.0
No Load, VO = 0, TA = +25°C
– 200
AVD = 100, TA = +25°C
– 120
Max
15
20
–
200
5
400
10
–
–
–
–
–
–
–
–
–
7.5
250
–
Unit
mV
mV
µV/°C
pA
nA
pA
nA
V
V
V
V/mV
V/mV
MHz
Ω
dB
dB
mW
µA
dB
Note 5. All characteristics are measured under open–loop conditions with zero common–mode volt-
age unless otherwise specified.
Note 6. Input bias currents of a FET–input operational amplifier are normal junction reverse currents,
which are temperature sensitive. Pulse techniques must be used that will maintain the junc-
tion temperature as close to the ambient temperature as possible.
Operating Characteristics: (VCC± = ±15V, TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Slew Rate at Unity Gain
Rise Time
Overshoot Factor
SR VI = 10V, RL = 10kΩ, CL = 100pF 1.5 3.5 –
tr VI = 20mV, RL = 10kΩ, CL = 100pF – 0.2 –
– 10% –
Equivalent Input Noise Voltage
Vn RS = 100Ω, f = 1kHz
– 42 –
Unit
V/µs
µs
nV/√Hz
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Pin Connection Diagram
Offset Null 1 1
Inverting Input 2
Non–Inverting Input 3
VCC (–) 4
8 N.C.
7 VCC (+)
6 Output
5 Offset Null 2
85
.260 (6.6)
14
.390 (9.9)
Max
.155
(3.93)
.300
(7.62)
.100 (2.54)
.300 (7.62)
.145 (3.68)
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Номер в каталоге | Описание | Производители |
NTE887 | Integrated Circuit Low Power / JFET OP Amplifier | NTE Electronics |
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