NTE904 PDF даташит
Спецификация NTE904 изготовлена «NTE Electronics» и имеет функцию, называемую «Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)». |
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Детали детали
Номер произв | NTE904 |
Описание | Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair) |
Производители | NTE Electronics |
логотип |
3 Pages
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NTE904
Integrated Circuit
General Purpose Transistor Array
(Two Isolated Transistors and a Darlington
Connected Transistor Pair)
Description:
The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic sub-
strate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
configuration. The substrate is connected to a separate terminal for maximum flexibility.
The transistors of the NTE904 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits but
in addition they provide the advantages of close electrical and thermal matching inherent in integrated
circuit construction.
Features:
D Matched Monolithic General Purpose Transistors
D Current Gain Matched to ±10%
D Base–Emitter Voltage Matched to ±2mV
D Operation from DC to 120MHz
D Wide Operating Current Range
D Low Noise Figure
Applications:
D General use in Signal Processing Systems in DC through VHF Range
D Custom Designed Differential Amplifiers
D Temperature Compenstaed Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage (Each Transistor), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage (Each Transistor), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Substrate Voltage (Each Transistor, Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage (Each Transistor), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (Each Transistor), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation, PD
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW
Derate Above 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin10) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Collector Cutoff Current
ICBO VCB = 10V, IE = 0
ICEO VCE = 10V, IB = 0
Collector Cutoff Current (Darlington Pair)
ICEOD VCE = 10V, IB = 0
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
Collector–Substrate Breakdown Voltage V(BR)CIO IC = 10µA, IC1 = 0
Collector–Emitter Saturation Voltage
VCE(sat) IC = 10mA, IB = 1mA
Static Forward Current Transfer Ratio
hFE VCE = 3V, IC = 10mA
VCE = 3V, IC = 1mA
VCE = 3V, IC = 10µA
Magnitude of Static–Beta Ratio
(Isolated Transistors Q1 and Q2)
VCE = 3V, IC1 = IC2 = 1mA
Static Forward Current Transfer Ratio
(Darlington Pair Q3 and Q4)
hFED
VCE = 3V, IC = 1mA
VCE = 3V, IC = 10µA
Base–Emitter Voltage
VBE VCE = 3V, IE = 1mA
VCE = 3V, IE = 10mA
Input Offset Voltage
VCE = 3V, IE = 1mA
Temperature Coefficient of Base–Emitter
Voltage (Q1 – Q2)
VCE = 3V, IE = 1mA
Base (Q3)–Emitter (Q4) Voltage
Darlington Pair
VBED
VCE = 3V, IE = 10mA
VCE = 3V, IE = 1mA
Temperature Coefficient of Base–Emitter
Voltage (Darlington Pair Q3–Q4)
VCE = 3V, IE = 1mA
Temperature Coefficient of Magnitude of
Input Offset Voltage
VCC = 6V, VEE = –6V,
IC1 = IC2 = 1mA
Low Frequency Noise Figure
NF VCE = 3V, IC = 100µA,
f = 1kHz, RS = 1kΩ
Low Frequency, Small–Signal Equivalent Circuit Characteristics
Forward Current Transfer Ratio
Short–Circuit Input Impedance
Open–Circuit Output Impedance
Open–Circuit Reverse Voltage Transfer Ratio
Admittance Characteristics
hfe VCE = 3V, IC = 1mA, f = 1kHz
hie
hoe
hre
Forward Transfer Admittance
Input Admittance
Output Admittance
Gain–Bandwidth Product
Emitter–Base Capacitance
Collector–Base Capacitance
Collector–Substrate Capacitance
Yfe
Yie
Yoe
fT
CEB
CCB
CCI
VCE = 3V, IC = 1mA, f = 1kHz
VCE = 3V, IC = 3mA
VEB = 3V, IE =0
VCB = 3V, IC = 0
VCI = 3V, IC = 0
Min Typ Max Unit
– 0.002 –
– – 0.5
––5
15 24 –
30 60 –
57–
40 60 –
– 0.23 0.5
50 100 –
60 100 200
54 –
–
0.9 0.97 –
nA
µA
µA
V
V
V
V
V
2000 5400 –
1000 2800 –
0.600 0.715 0.800 V
– 0.800 0.900 V
– 0.48 2.0 mV
– 1.9 – mV/°C
– 1.46 1.60 V
1.10 1.32 1.50 V
– 4.4 – mV/°C
– 10 – µV/°C
– 3.25 –
dB
– 110 –
– 3.5 –
– 15.6 –
1.8 x 104 (Typ)
kΩ
µmhos
31–j1.5 (Typ)
0.3+j0.04 (Typ)
0.001+j0.03 (Typ)
300 500 –
– 0.6 –
– 0.58 –
– 2.8 –
mmho
mmho
mmho
MHz
pF
pF
pF
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Pin Connection Diagram
(Top View)
Collector Q1
Base Q3 9
8
Substrate/Case 10
67 Emitter Q1
6 Base Q1
Collector Q3 11
5 Collector Q2
Collector Q4 12
Emitter Q4 1
4 Emitter Q2
12 3 Base Q2
Emitter Q3/Base Q4
.370 (9.4) Dia Max
.335 (8.5) Dia Max
.180
(4.57)
Max
.500
(12.7)
Min
.018 (0.48) Dia Typ
.245 (6.23) Dia
34
5
2
6
17
12
11
8
9
10
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