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PDF NTE912 Data sheet ( Hoja de datos )
| Número de pieza | NTE912 | |
| Descripción | Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair) | |
| Fabricantes | NTE Electronics | |
| Logotipo |  |
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NTE912
Integrated Circuit
General Purpose Transistor Array
(Three Isolated Transistors and One Differentially–Connected Transistor Pair)
Description:
The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic sub-
strate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differ-
entially–connected pair.
The transistors of the NTE912 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How-
ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec-
trical and thermal matching.
Features:
D Two Matched Pairs of Transistors:
VBE matched ±5mV
Input Offset Current 2µA Max. @ IC = 1mA
D 5 General Purpose Monolithic Transistors
D Operation from DC to 120MHz
D Wide Operating Current Range
D Low Noise Figure: 3.2dB Typ @ 1kHz
Applications:
D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency
Range from DC to VHF
D Custom Designed Differential Amplifiers
D Temperature Compensated Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation (TA ≤ +55°C), PD
Each Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/°C
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . . +265°C
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin13) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet NTE912.PDF ] | |
Hoja de datos destacado
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| NTE91 | Silicon Complementary Transistors |  NTE |
| NTE912 | Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair) | NTE Electronics |
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