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NTF2955T3 PDF даташит

Спецификация NTF2955T3 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTF2955T3
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTF2955T3 Даташит, Описание, Даташиты
NTF2955
Power MOSFET
−60 V, −2.6 A, Single P−Channel SOT−223
Features
TMOS7 Design for low RDS(on)
Withstands High Energy in Avalanche and Commutation Modes
Applications
Power Supplies
PWM Motor Control
Converters
Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
VDSS
VGS
ID
−60
±20
−2.6
−2.0
Unit
V
V
A
Power Dissipation
(Note 1)
Steady TA = 25°C
State
PD
2.3 W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
ID
PD
IDM
TJ,
TSTG
EAS
TL
−1.7 A
−1.3
1.0 W
−10.4
−55 to
175
225
A
°C
mJ
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Tab (Drain) − Steady State (Note 2) RqJC
14 °C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
65
Junction−to−Ambient − Steady State (Note 2)
RqJA
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.127 in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in2)
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V(BR)DSS
−60 V
RDS(on) TYP
145 mW @ −10 V
ID MAX
−2.6 A
P−Channel
D
G
S
1
2
3
4
SOT−223
CASE 318E
STYLE 3
2955
L
WW
= Device Code
= Location Code
= Work Week
MARKING
DIAGRAM
2955
LWW
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
NTF2955T1
NTF2955T3
SOT−223
SOT−223
1000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 1
1
Publication Order Number:
NTF2955/D









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NTF2955T3 Даташит, Описание, Даташиты
NTF2955
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V(BR)DSS
V(BR)DSS/TJ
IDSS
Gate−to−Source Leakage Current
IGSS
VGS = 0 V, ID = −250 mA
VGS = 0 V,
VDS = −60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = −1.0 mA
VGS = −10 V, ID = −0.75 A
VGS = −10 V, ID = −1.5 A
VGS = −10 V, ID = −2.4 A
VGS = −15 V, ID = −0.75 A
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 30 V,
ID = 1.5 A
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDD = 25 V,
ID = 1.5 A, RG = 9.1
RL = 25
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 1.5 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 1.5 A
3. Pulse Test: pulse width 300ms, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
−60
−2.0
Typ Max Unit
V
66.4 mV/°C
−1.0
−50
±100
mA
nA
−4.0 V
145 170 m
150 180
154 185
1.77 S
492 pF
165
50
14.3 nC
1.2
2.3
5.2
11 ns
7.6
65
38
−1.10
−0.9
36
20
16
0.139
−1.30
V
ns
nC
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NTF2955T3 Даташит, Описание, Даташиты
NTF2955
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
VGS = −6 V
8 VGS = −10 V to −7 V TJ = 25 °C
VGS = −5.5 V
6
VGS = −5 V
4
VGS = −4.5 V
2
VGS = −3.8 V
0
0 1 2 3 4 5 6 7 8 9 10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
10
VDS 10 V
TJ = −55°C
8 TJ = 25°C
6
TJ = 125°C
4
2
0
2 4 6 8 10
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.4
VGS = −10 V
0.3
0.2
0.1
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
0 2 4 6 8 10
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.25
0.225
TJ = 25°C
0.2
0.175
0.15
0.125
VGS = −10 V
VGS = −15 V
0.1
0.075
0.05
0 2 4 6 8 10
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
1.8
ID = −1.5 A
VGS = −10 V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
1000
VGS = 0 V
TJ = 150°C
100
TJ = 125°C
10
5 10 15 20 25 30 35 40 45 50 55 60
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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