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NCN6010D PDF даташит

Спецификация NCN6010D изготовлена ​​​​«ON» и имеет функцию, называемую «SIM Card Supply and Level Shifter».

Детали детали

Номер произв NCN6010D
Описание SIM Card Supply and Level Shifter
Производители ON
логотип ON логотип 

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NCN6010D Даташит, Описание, Даташиты
NCN6010
SIM Card Supply and
Level Shifter
The NCN6010 is a level shifter analog circuit designed to translate
the voltages between a SIM Card and an external microcontroller. A
built–in DC/DC converter makes the NCN6010 useable to drive any
type of SIM card. The device fulfills the GSM 11.11 specification. The
external MPU has an access to a dedicated input STOP pin, providing
a way to switch off the power applied to the SIM card in case of failure
or when the card is removed.
Features
Supports 3.0 V or 5.0 V Operating SIM Card
Built–in Pull Up Resistor for I/O Pin in Both Directions
All Pins are Fully ESD Protected, According to GSM Specification
Supports 10 MHz Clock
6.0 kV ESD Proof on SIM Card Pins
Typical Applications
Cellular Phone SIM Interface
Identification Module
14
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MARKING
DIAGRAM
14
TSSOP–14
CASE 948G
NCN
6010
ALYW
1
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
VDD
C4
4.7
GND µF
VCC
P4
P3
P2
P1
P0
GND
1
VDD
2
14
SIM_VCC
13
STOP
3
MOD_VCC
4
PWR_ON
5
I/O
Cta
Ctb 12
6 11
CLOCK SIM_IO
7
RESET
10
GND
9
SIM_CLK
8
SIM_RST
C2
220 nF
43
C3
1 µF
GND
21
9
PIN CONNECTIONS
VDD 1
STOP 2
MOD_VCC 3
PWR_ON 4
I/O 5
CLOCK 6
RESET 7
(Top View)
14 SIM_VCC
13 Cta
12 Ctb
11 SIM_IO
10 GND
9 SIM_CLK
8 SIM_RST
ORDERING INFORMATION
Device
Package
Shipping
NCN6010DTB TSSOP–14 96 Units/Rail
NCN6010DTBR2 TSSOP–14 2500 Tape & Reel
8 7 65
10
Figure 1. Typical Interface Application
GND
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 1
1
Publication Order Number:
NCN6010/D









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NCN6010D Даташит, Описание, Даташиты
STOP 2
MOD_VCC 3
PWR_ON 4
VDD 1
NCN6010
ENABLE
3 V/5 V
POWER UNIT & LOGIC
MANAGEMENT
CLOCK 6
RESET 7
VDD
GND
VCC
14 SIM_VCC
13 Cta
12 Ctb
9 SIM_CLK
GND
8 SIM_RST
GND
I/O 5
I/O
DATA
DATA
I/O
GND
11 SIM_IO
GND
10 GROUND
Figure 2. NCN6010 Block Diagram
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NCN6010D Даташит, Описание, Даташиты
PIN DESCRIPTIONS
Pin Name
1 VDD
2 STOP
3 MOD_VCC
4 PWR_ON
5 I/O
Type
POWER
INPUT
INPUT
INPUT
INPUT
6 CLOCK
7 RESET
8 SIM_RST
9 SIM_CLK
INPUT
INPUT
OUTPUT
OUTPUT
10 GND
11 SIM_I/O
GROUND
12 Cta
13 Ctb
14 SIM_VCC
POWER
POWER
POWER
NCN6010
Description
This pin is connected to the system controller power supply suitable to operate from
a 3.6 V typical battery. A low ESR ceramic capacitor (4.7 mF typical) shall be used to
bypass the power supply voltage.
A Low level on this pin resets the SIM interface, switching off the SIM_VCC,
according to the ISO7816–3 Power Down procedure (See Table 1 and Figure 3).
The signal present on this pin programs the SIM_VCC value (See Table 1):
MOD_VCC = L SIM_VCC = 5.0 V
MOD_VCC = H SIM_VCC = 3.0 V
The signal present on this pin controls the SIM_VCC state (See Table 1):
PWR_ON = L SIM_VCC = Open, no supply connected to the SIM card.
PWR_ON = H SIM_VCC = Active, the card is powered.
This pin is connected to an external microcontroller or GSM management unit. A
bi–directional level translator adapts the serial I/O signal between the smart card and
the external controller. A built–in constant 20 k(typical) resistor provides a high
impedance state when not activated.
The clock signal, coming from the external controller, must have a Duty Cycle within
the Min/Max values defined by the specification (typically 50%). The built–in level
shifter translates the input signal to the external SIM card CLK input.
The RESET signal present at this pin is connected to the SIM card. The internal level
shifter translates the level according to the voltages present at pin 1 and the
SIM_VCC programmed value.
This pin is connected to the RESET pin of the card connector. A level translator
adapts the external RESET signal to the SIM card. A built–in active pull down
connects this pin to ground when the device is in a nonoperating mode.
This pin is connected to the CLK pin of the card connector. The CLOCK signal
comes from the external clock generator, the internal level shifter being used to
adapt the voltage defined for the SIM_VCC. A built–in active pull down connects this
pin to ground when the device is in a nonoperating mode.
This pin is the GROUND reference for the integrated circuit and associated signals.
Cares must be observed to avoid voltage spikes when the device operates in a
normal operation.
This pin handles the connection to the serial I/O of the card connector. A
bi–directional level translator adapts the serial I/O signal between the card and the
microcontroller. A 20 k(typical) pull up resistor provides a High impedance state for
the SIM card I/O link.
This pin is connected to the external capacitor used by the internal Charge Pump
converter. Using Low ESR ceramic type is recommended (X5R or X7R).
This pin is connected to the external capacitor used by the internal Charge Pump
converter. Using Low ESR ceramic type is recommended (X5R or X7R).
This pin is connected to the SIM card power supply pin. An internal Charge Pump
converter is programmable by the external MPU to supply either 3.0 V or 5.0 V
output voltage. An external 1.0 µF minimum ceramic capacitor (ESR t 100 mW,
X5R or X7R recommended) must be connected across SIM_VCC and GND.
During a normal operation, the SIM_VCC voltage can be set to 3.0 V followed by a
5.0 V value, or can start directly to any of these two values. When the voltage is
adjusted downward (from 5.0 V to 3.0 V) cares must be observed as reverse peak
current can flow from the external capacitors to the battery during a short amount of
time (in the 1.0 µs range). When such a voltage adjustment is necessary, it is
recommended to force SIM_VCC to zero, wait 350 µs minimum, then reprogram the
chip to get SIM_VCC = 3.0 V.
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