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PDF NCN6010DTBR2 Data sheet ( Hoja de datos )
| Número de pieza | NCN6010DTBR2 | |
| Descripción | SIM Card Supply and Level Shifter | |
| Fabricantes | ON | |
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NCN6010
SIM Card Supply and
Level Shifter
The NCN6010 is a level shifter analog circuit designed to translate
the voltages between a SIM Card and an external microcontroller. A
built–in DC/DC converter makes the NCN6010 useable to drive any
type of SIM card. The device fulfills the GSM 11.11 specification. The
external MPU has an access to a dedicated input STOP pin, providing
a way to switch off the power applied to the SIM card in case of failure
or when the card is removed.
Features
• Supports 3.0 V or 5.0 V Operating SIM Card
• Built–in Pull Up Resistor for I/O Pin in Both Directions
• All Pins are Fully ESD Protected, According to GSM Specification
• Supports 10 MHz Clock
• 6.0 kV ESD Proof on SIM Card Pins
Typical Applications
• Cellular Phone SIM Interface
• Identification Module
14
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MARKING
DIAGRAM
14
TSSOP–14
CASE 948G
NCN
6010
ALYW
1
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
VDD
C4
4.7
GND µF
VCC
P4
P3
P2
P1
P0
GND
1
VDD
2
14
SIM_VCC
13
STOP
3
MOD_VCC
4
PWR_ON
5
I/O
Cta
Ctb 12
6 11
CLOCK SIM_IO
7
RESET
10
GND
9
SIM_CLK
8
SIM_RST
C2
220 nF
43
C3
1 µF
GND
21
9
PIN CONNECTIONS
VDD 1
STOP 2
MOD_VCC 3
PWR_ON 4
I/O 5
CLOCK 6
RESET 7
(Top View)
14 SIM_VCC
13 Cta
12 Ctb
11 SIM_IO
10 GND
9 SIM_CLK
8 SIM_RST
ORDERING INFORMATION
Device
Package
Shipping
NCN6010DTB TSSOP–14 96 Units/Rail
NCN6010DTBR2 TSSOP–14 2500 Tape & Reel
8 7 65
10
Figure 1. Typical Interface Application
GND
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 1
1
Publication Order Number:
NCN6010/D
1 page  
NCN6010
POWER SUPPLY SECTION (–255C to +855C)
Rating
Symbol Pin
Min
Typ
Max Unit
Power Supply
VDD
1
2.7
–
3.6 V
Standby Supply Current @ No Input Clock, All Input
I VDD
1
–
500
– nA
Logic to H, No Load Connected to the SIM Interface.
Ground Current, @ VDD = 3.0 V, Operating Conditions:
PWR_ON = 0
SIM_VCC = 5.0 V, ICC = 0 mA
SIM_VCC = 5.0 V, ICC = 10 mA (Note 2.)
SIM_VCC = 3.0 V, ICC = 0 mA
SIM_VCC = 3.0 V, ICC = 6.0 mA (Note 2.)
External Card Power Supply at 5.0 V
@ 2.7 V v VDD v 3.6 V, ICC = 10 mA
External Card Power Supply at 3.0 V
@ 2.7 V v VDD v 3.6 V, ICC = 10 mA
Output SIM Card Supply Voltage Turn On Time
Ct = 220 nF, Cout1 = 1.0 µF "20%
VDD = 3.0 V, SIM_VCC = 5.0 V
VDD = 3.0 V, SIM_VCC = 3.0 V
Output SIM Card Supply Voltage Turn Off Time
Ct = 220 nF, Cout1 = 1.0 µF "20% (Note 3.)
VDD = 2.7 V, SIM_VCC = 5.0 V, @ VLOW = 0.4 V
VDD = 2.7 V, SIM_VCC = 3.0 V, @ VLOW = 0.4 V
Output Voltage Ripple (Note 4.)
Ct = 220 nF, Cout1 = 1.0 µF, Cout2 = 100 nF
VDD = 3.0 V, SIM_VCC = 5.0 V, ICC = 10 mA
(Not Relevant at SIM_VCC = 3.0 V)
I VDD
SIM_VCC
VCCTON
VCCTOFF
VCCRIP
1
14
14
14
14
–
200
40
4.5
VDD – 50 mV
–
VDD – 25 mV
0.5
––
––
5.0
125
25
5.5
VDD
1.0
300
300
200
µA
V
ms
µs
mV
Input Peak Current During DC/DC Startup
@ VDD = 3.0 V, SIM_VCC = 5.0 V
IDDpk
1
–
300
– mA
Input Average Current During Normal Operation,
IDDavg
1
–
20
– mA
@ VDD = 3.0 V, SIM_VCC = 5.0 V
DC/DC Internal Oscillator
Fosc
–
–
800
– kHz
2. The IDD current represents the absolute difference between the current absorbed by the load and the one absorbed by the chip.
3. A 350 µs delay must be observed by the external MPU prior to reactivate the SIM_VCC output.
4. Using low ESR capacitors type (max 100 mΩ) is mandatory for Ct, Cout1 and Cout2 to reach the NCN6010 specifications. Ceramic type
(X5R or X7R) are recommended.
DIGITAL INPUT SECTION CLOCK, RESET, I/O, STOP, MOD_VCC, PWR_ON
Rating
Symbol
Pin
Min
High Level Input Voltage
Low Level Input Voltage
Input Rise Time
Input Fall Time
Input Capacitance
VIH 2, 3 0.7 * VDD
VIL 4, 5
tr 6, 7
tf
Cin
Input @ 45% < Duty Cycle < 55%
Clock Rise Time
Clock Fall Time
Input Clock Capacitance
CLOCK
6
–
Input/Output Data Transfer Frequency
I/O Rise Time
I/O Fall Time
Input I/O Capacitance
I/O 5
–
Typ
–
–
15
Max
VDD
0.3 * VDD
50
50
10
5.0
50
50
10
160
0.8
0.8
10
Unit
V
V
ns
ns
pF
MHz
ns
ns
pF
kHz
µs
µs
pF
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5
5 Page 
S1
S2
S3
S4
S5
MOD_VCC
NCN6010
SIM_VCC = 5.0 V
SIM_VCC = 3.0 V
Figure 10. Basic Charge Pump Operating Timings
When the NCN6010 is programmed in the 5.0 V output
voltage, the clocks are activated, switch S5 is disconnected
and the output voltage is the result of the C1 charge transfer
into the output load. The current is limited by three mains
parameters:
– the Ron of the switching MOS (S1 through S4)
– the operating frequency
– the C1/C2 ratio and their ESR
The first parameters are depending upon the internal
structure and size of the NMOS/PMOS devices used to
design the chip. The third parameter is adjustable by the user
and, beside the micro farad values, the type of capacitors
plays a significant role. As a matter of fact, using a low cost
electrolytic model will ruin the efficiency due to the high
ESR of such a capacitor. It is highly recommended to use
ceramic types, preferably from the X5R or X7R series, to
achieve the efficiency and the SIM_VCC output voltage
ripple. Table 2 summarizes the characteristics of the most
common type of capacitors.
Manufacturers
MURATA
VISHAY
VISHAY
Table 2. Comparison of Capacitor Types
Type/Serie
CERAMIC/GRM225
Tantalum/594C/593C
Electrolytic/94SV
Format
0805
1206
1206
Max Value
10 mF/6.3 V
10 mF/16 V
10 mF/10 V
Tolerance
+80%/–20%
–
–20%/+20%
Typ. Z @ 500 kHz
30 mW
450 mW
400 mW
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet NCN6010DTBR2.PDF ] | |
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