NCP5203MNR2G Datasheet PDF - ON
| Part Number | NCP5203MNR2G | |
| Description | 2-in-1 DDR Power Controller | |
| Manufacturers | ON | |
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NCP5203
2−in−1 DDR Power
Controller
The NCP5203 2−in−1 DDR Power Controller is a complete power
solution for an ACPI compliant high current DDR memory system.
This IC combines the efficiency of a PWM controller for the VDDQ
supply with the simplicity of linear regulator for the VTT
termination voltage. The NCP5203 contains a synchronous PWM
buck controller for driving two external NFETs to form the DDR
memory supply voltage (VDDQ). The $2.0 A user adjustable VTT
terminator regulator has short circuit protection. An internal power
good function monitors both the VDDQ and VTT outputs and signals
if a fault occurs. Protective features include soft−start, undervoltage
monitoring of 5VDUAL, over protection current (OCP), and thermal
shutdown. The IC is packaged in 18−lead QFN.
Features
• Supports DDR I and DDR II
• Incorporates VDDQ, VTT Regulators
• Operates from Single 5 V Supply
• VTT Regulator includes Integrated Power FETs Sourcing/Sinking
up to 2.0 A
• All External Power MOSFETs are N−Channel
• Adjustable VDDQ
• Adjustable VTT
• Fixed Switching Frequency of 300 kHz for VDDQ in S0
• Fixed Switching Frequency of 600 kHz for VDDQ in S3
• Soft−Start Protection for VDDQ
• Undervoltage Monitor of 5VDUAL
• Short−Circuit Protection for VDDQ and VTT
• Thermal Shutdown
• Housed in QFN−18
• Pb−Free Package is Available*
Typical Applications
• DDR Memory Supply and Termination Voltage
• Active Termination Busses (SSTL−2, SSTL−3)
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MARKING
DIAGRAM
18 1
1
18−LEAD QFN, 5 x 6 mm
MN SUFFIX
CASE 505
NCP5203
AWLYYWW
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
PIN CONNECTIONS
VDDQEN
VTTEN
PGOOD
REFSNS
FBVTT
AGND
SS
COMP
FBDDQ
1
2
3
4
5
6
7
8
9
18 VDDQ
17 VTT
16 PGND
15 BST
14 BGDDQ
13 TGDDQ
12 5VDUAL
11 SWDDQ
10 OCDDQ
ORDERING INFORMATION
Device
Package
Shipping†
NCP5203MNR2
NCP5203MNR2G
QFN 2500 Tape & Reel
QFN 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 1
1
Publication Order Number:
NCP5203/D
|
| |
 
NCP5203
ELECTRICAL CHARACTERISTICS (5VDUAL = 5.0 V, TA = 0 to 70°C)
Characteristic
Test Conditions
Supply Voltage
5VDUAL Operating Voltage
−
BST Operating Voltage
−
Supply Current
Quiescent Supply Current (5VDUAL)
−
Shutdown Current
VDDQEN = 0 V, VTTEN = 0 V
Undervoltage Monitor
5VDUAL UVLO Lower Threshold
Falling Edge
5VDUAL UVLO Hysteresis
−
Thermal Shutdown
Thermal Trip Point
(Note 2)
VDDQ Switching Regulator
FBDDQ Feedback Voltage,
Control Loop in Regulation
Feedback Input Current
TA = 0 to 70_C
TA = 25_C
VFBDDQ = 1.25 V
Oscillator Frequency in S0 Mode
VDDQEN = VTTEN = 5 V
Oscillator Frequency in S3 Mode
VDDQEN = 5 V, VTTEN = 0 V
Ramp−Amplitude Voltage
At Max Duty Cycle
OCDDQ Pin Current Sink
VOCDDQ = 4.0 V, TA = 25_C
OCDDQ Pin Current Sink Temperature Coefficient (Note 2)
Minimum Duty Cycle
−
Maximum Duty Cycle
−
Soft−start Current
Overvoltage Trip Threshold
DDQEN = 5.0 V; VSS = 0 V
With respect to Error Comparator Threshold
Undervoltage Trip Threshold
With respect to Error Comparator Threshold
Error Amplifier
DC Gain
(Note 2)
Unity Gain Bandwidth
COMP_GND = 220 nF, 1.0 W in series
(Note 2)
Slew Rate
COMP_GND = 10 pF (Note 2)
Gate Drivers
TGDDQ Gate Pull−HIGH Resistance
IOUT = 400 mA, VBST = 10 V
TGDDQ Gate Pull−LOW Resistance
IOUT = 400 mA, VBST = 10 V
BGDDQ Gate Pull−HIGH Resistance
IOUT = 400 mA, VBST = 10 V
BGDDQ Gate Pull−LOW Resistance
IOUT = 400 mA, VBST = 10 V
2. Guaranteed by design, not tested in production.
Min
4.5
4.0
−
−
3.6
−
−
1.225
1.232
−
262.5
500
−
23
−
0
−
3.5
115
−
−
−
−
−
−
−
−
Typ
5.0
10
5.0
−
3.95
0.2
150
1.25
1.25
−
300
600
1.25
35
3200
−
90
5.0
130
65
70
2.0
8.0
3.5
2.5
3.5
1.3
Max Unit
5.5 V
13.2 V
10 mA
1.0 mA
4.3 V
−V
− _C
1.275
1.268
1.0
337.5
700
−
47
−
−
−
6.5
−
75
V
mA
kHz
kHz
V
mA
ppm/_C
%
%
mA
%
%
− dB
− MHz
− V/mS
−W
−W
−W
−W
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