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PDF NCP802 Data sheet ( Hoja de datos )

Número de pieza NCP802
Descripción Highly Integrated Lithium Battery Protection Circuit for One Cell Battery Packs
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NCP802
Highly Integrated Lithium
Battery Protection Circuit
for One Cell Battery Packs
The NCP802 resides in a lithium battery pack where the battery cell
continuously powers it. This circuit senses cell voltage, charge
current, and discharge current, and correspondingly controls the state
of two, N−channel MOSFET switches. These switches reside in series
with the negative terminal of the cell and the negative terminal of the
battery pack. During a fault condition, the NCP802 open circuits the
pack by turning off one of these MOSFET switches, which
disconnects the current path. Internal delay circuitry minimizes
external component count.
Features
Highly Accurate Overvoltage Detector
"25 mV at Room Temperature
"30 mV from −5 to 55°C
Fault Detection Thresholds
Overvoltage Threshold:
SN1/SAN1 = 4.35 V, SAN5 = 4.275 V, SAN6 = 4.28 V
Undervoltage Threshold:
SN1/SAN1 = 2.4 V, SAN5/6 = 2.3 V
Discharge Current Threshold:
SN1/SAN1/SAN6 = 0.2 V, SAN5 = 0.1 V
Charge Current Threshold: 0.1 V
Internal Output Delays
Overvoltage Output Delay:
SN1/SAN1/SAN6 = 250 ms, SAN5 = 1 ms
Undervoltage Output Delay: 20 ms
Discharge Current Output Delay:
SN1/SAN1/SAN6 = 12 ms, SAN5 = 6 ms
Charge Current Output Delay:
SN1/SAN1/SAN6 = 16 ms, SAN5 = 8 ms
Absolute Maximum Rating of 28 V for the Charger Input
Low Quiescent Current
Normal Operating Current: 3.0 mA
Standby Current when Cells are Discharged: 0.1 mA
Zero Volt Charging
Available in a Low Profile Surface Mount Package
Pb−Free Package is Available*
http://onsemi.com
MARKING
DIAGRAMS
6
1
SOT23−6
SN SUFFIX
CASE 1262
XXxx
6
SON−6
XX
SAN SUFFIX
xx
CASE 494
1
XX = Specific Device Code
xx = Date Code
PIN CONNECTIONS
DO 1
P− 2
CO 3
6 Gnd
5 Vcell
4 DS
SOT23−6
(Top View)
DO 1
6 P−
Vcell 2
5 CO
Gnd 3
4 DS
SON−6
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 20 of this data sheet.
*For additional information on our Pb−Free
strategy and soldering details, please download
the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 10
1
Publication Order Number:
NCP802/D

1 page




NCP802 pdf
NCP802
CONNECT
LOAD
CONNECT
CHARGER
CONNECT
LOAD
EXCESS
DISCHARGE
CONNECT CURRENT SHORT
CHARGER
OPEN
OPEN
VCELL
VDET2
VDD
Vshort
−P VDET3
Gnd
VDET4
VDD
tDET2
Gnd
DO
CHARGE
CURRENT
CHARGE/
DISCHARGE
CURRENT
0
DISCHARGE
CURRENT
tDET2
tREL2
tDET3
tREL2
t
tshort
t
tREL3
tREL3
t
t
Figure 4. Undervoltage/Excess Discharge Current Timing Chart
http://onsemi.com
5

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NCP802 arduino
NCP802
1.8 2.20
1.6 2.15
1.4 2.10
1.2
2.05
1 VDD = 3.0 V
2.00
0.8
0.6 1.95
0.4 1.90
0.2 1.85
0 1.80
−60 −40 −20 0 20 40 60 80 100
−50
TA, AMBIENT TEMPERATURE (°C)
0 50
TA, AMBIENT TEMPERATURE (°C)
100
Figure 17. Excess Charge Current Release
Time vs. Temperature
Figure 18. Short Protection Threshold vs.
Temperature
700
600
500
400
300
200
100
0
−50 0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 19. Short Protection Delay Time vs.
Temperature
3
2.5
2
VDD = 3.0 V
1.5
1
0.5
0
−50 0 50
TA, AMBIENT TEMPERATURE (°C)
100
Figure 20. DS Pin High Input Minimum Voltage
vs. Temperature
3
2.5
2
1.5
VDD = 3.6 V to 4.4 V
1
0.5
0
−50 0 50
TA, AMBIENT TEMPERATURE (°C)
Figure 21. DS Pin Middle Input Minimum
Voltage vs. Temperature
100
2.5
2
VDD = 3.6 V
1.5
1
0.5
0
−50 0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 22. DS Pin Pull−Down Resistance vs.
Temperature
http://onsemi.com
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