DataSheet26.com

NDB408BE PDF даташит

Спецификация NDB408BE изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDB408BE
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

6 Pages
scroll

No Preview Available !

NDB408BE Даташит, Описание, Даташиты
May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE
NDB408A / NDB408AE / NDB408B / NDB408BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
12 and 11A, 80V. RDS(ON) = 0.16 and 0.20.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP408A NDP408AE
NDB408A NDB408AE
NDP408B NDP408BE
NDB408B NDB408BE
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
80
80
±20
±40
12 11
36 33
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
0.33
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
Units
V
V
V
V
A
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP408.SAM









No Preview Available !

NDB408BE Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
EAS Single Pulse Drain-Source VDD = 25 V, ID = 12 A
Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
Type Min Typ Max Units
NDP408AE
NDP408BE
NDB408AE
NDB408BE
40 mJ
12 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 µA
ALL 80
V
IDSS Zero Gate Voltage Drain
Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VDS = 80 V,
VGS = 0 V
TJ = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ALL
ALL
ALL
250 µA
1 mA
100 nA
-100 nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
VDS = VGS,
ID = 250 µA
TJ = 125°C
ALL
2 2.9
1.4 2.3
4
3.6
VGS = 10 V,
ID = 6 A
NDP408A
NDP408AE
NDB408A
TJ = 125°C NDB408AE
0.11 0.16
0.19 0.32
VGS = 10 V,
ID = 5.5 A
NDP408B
NDP408BE
NDB408B
TJ = 125°C NDB408BE
0.2
0.5
VGS = 10 V, VDS = 10 V
NDP408A
NDP408AE
NDB408A
NDB408AE
11
V
V
A
NDP408B
NDP408BE
NDB408B
NDB408BE
10
A
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10 V, ID = 6 A
ALL 3 5.3
S
Ciss Input Capacitance
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
ALL 380 500 pF
ALL 115 125 pF
ALL 35 50 pF
NDP408.SAM









No Preview Available !

NDB408BE Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn - On Delay Time
tr Turn - On Rise Time
VDD = 40 V, ID = 12 A,
VGS = 10 V, RGEN = 24
tD(OFF)
Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 64 V,
ID = 12 A, VGS = 10V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
ALL 7.5 20 nS
ALL 48 80 nS
ALL 22 40 nS
ALL 32 60 nS
ALL 12 17 nC
ALL 2.5 nC
ALL 6 nC
IS Maximum Continuos Drain-Source Diode Forward Current
NDP408A
NDP408AE
NDB408A
NDB408AE
12 A
NDP408B
NDP408BE
NDB408B
NDB408BE
11 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
NDP408A
NDP408AE
NDB408A
NDB408AE
36 A
NDP408B
NDP408BE
NDB408B
NDB408BE
33 A
VSD Drain-Source Diode Forward
(Note 2) Voltage
trr Reverse Recovery Time
Irr Reverse Recovery Current
THERMAL CHARACTERISTICS
VGS = 0 V,
IS = 6 A
VGS = 0 V, IS = 12 A,
dIS/dt = 100 A/µs
TJ = 125°C
ALL
ALL
ALL
0.87 1.3
0.74 1.2
68 100
4.7 7
V
V
ns
A
RθJC
Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Notes:
1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
ALL
ALL
3 °C/W
62.5 °C/W
NDP408.SAM










Скачать PDF:

[ NDB408BE.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NDB408BN-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild
NDB408BEN-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск