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PDF NDB410BE Data sheet ( Hoja de datos )
| Número de pieza | NDB410BE | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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May 1994
NDP410A / NDP410AE / NDP410B / NDP410BE
NDB410A / NDB410AE / NDB410B / NDB410BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP410A NDP410AE
NDB410A NDB410AE
NDP410B NDP410BE
NDB410B NDB410BE
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
100
100
±20
±40
98
36 32
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
0.33
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
Units
V
V
V
V
A
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP410.SAM
1 page  
Typical Electrical Characteristics (continued)
1.06
1.04
I D = 250µA
1.02
1
0.98
0.96
-50
-25
0 25 50 75 100 125 150 175
T J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
1000
500
C iss
200
C oss
100
50
20
10
0.1
f = 1 MHz
VGS = 0V
Crss
0.2
0.5 1
2
5 10 20
VDS , DRAIN TO SOURCE VOLTAGE (V)
50
Figure 9. Capacitance Characteristics.
15
10 VGS = 0V
1
TJ = 125°C
25°C
-55°C
0.1
0.01
0.2
0.4 0.6 0.8 1 1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
20
ID = 9A
15
VDS = 20V
50
80
10
5
0
0 5 10 15 20
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VGS
RGEN
G
VDD
RL
D
V OUT
DUT
S
t d(on)
t on
tr
90%
t d(off)
toff
tf
90%
Output, Vout
Input, Vin
10%
10%
50%
10%
90% Inverted
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP410.SAM
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDB410BE.PDF ] | |
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