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NDB508AE PDF даташит

Спецификация NDB508AE изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDB508AE
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDB508AE Даташит, Описание, Даташиты
May 1994
NDP508A / NDP508AE / NDP508B / NDP508BE
NDB508A / NDB508AE / NDB508B / NDB508BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP508A NDP508AE
NDB508A NDB508AE
NDP508B NDP508BE
NDB508B NDB508BE
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
80
80
±20
±40
19 17
57 51
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
75
0.5
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
Units
V
V
V
V
A
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP508.SAM









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NDB508AE Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
EAS Single Pulse Drain-Source VDD = 25 V, ID = 19 A
Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
Type Min Typ Max Units
NDP508AE
NDP508BE
NDB508AE
NDB508BE
55 mJ
19 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown
Voltage
IDSS Zero Gate Voltage Drain
Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS = 0 V, ID = 250 µA
VDS = 80 V,
VGS = 0 V
TJ = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ALL
ALL
ALL
ALL
VDS = VGS,
ID = 250 µA
VGS = 10 V,
ID = 9.5 A
TJ = 125°C
VGS = 10 V,
ID = 8.5 A
TJ = 125°C
TJ = 125°C
VGS = 10 V, VDS = 10 V
ALL
NDP508A
NDP508AE
NDB508A
NDB508AE
NDP508B
NDP508BE
NDB508B
NDB508BE
NDP508A
NDP508AE
NDB508A
NDB508AE
NDP508B
NDP508BE
NDB508B
NDB508BE
VDS = 10 V, ID = 9.5 A
ALL
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
ALL
ALL
ALL
80
250
1
100
-100
2 2.9 4
1.4 2.3 3.6
0.057 0.08
0.097 0.16
0.1
0.2
19
17
6 9.6
750 900
200 250
60 90
V
µA
mA
nA
nA
V
V
A
A
S
pF
pF
pF
NDP508.SAM









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NDB508AE Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn - On Delay Time
tr Turn - On Rise Time
VDD = 40 V, ID = 19 A,
VGS = 10 V, RGEN = 15
tD(OFF)
Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 64 V,
ID = 19 A, VGS = 10 V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
ALL 8.5 20 nS
ALL 66 110 nS
ALL 31 50 nS
ALL 48 80 nS
ALL 23.5 34 nC
ALL 4.5 nC
ALL 11.8 nC
IS Maximum Continuos Drain-Source Diode Forward Current
NDP508A
NDP508AE
NDB508A
NDB508AE
19 A
NDP508B
NDP508BE
NDB508B
NDB508BE
17 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
NDP508A
NDP508AE
NDB508A
NDB508AE
57 A
NDP508B
NDP508BE
NDB508B
NDB508BE
51 A
VSD Drain-Source Diode Forward
(Note 2) Voltage
trr Reverse Recovery Time
Irr Reverse Recovery Current
THERMAL CHARACTERISTICS
VGS = 0 V,
IS = 9.5 A
VGS = 0 V, IS = 19 A,
dIS/dt = 100 A/µs
TJ = 125°C
ALL
ALL
ALL
0.87 1.3
0.79 1.2
78 110
5.2 75
V
V
ns
A
RθJC
Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Notes:
1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
ALL
ALL
2 °C/W
62.5 °C/W
NDP508.SAM










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