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PDF NDB6020 Data sheet ( Hoja de datos )
| Número de pieza | NDB6020 | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NDB6020 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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November 1996
NDP6020 / NDB6020
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power
field effect transistors are produced using National's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters,
PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
35
A,
20
V.
RDS(ON)
RDS(ON)
=
=
0.023
0.028
Ω
Ω
@
@
VGS=
VGS=
4.5
2.7
V
V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
NDP6020
VDSS Drain-Source Voltage
VDGR Drain-Gate Voltage (RGS < 1 MΩ)
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
20
20
±8
35
100
60
0.4
-65 to 175
NDB6020
Units
V
V
V
A
W
W/°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP6020 Rev.C
1 page  
Typical Electrical Characteristics (continued)
1 .1 5
1 .1
I D =250µA
1 .0 5
1
0 .9 5
0 .9
-5 0
-2 5
0 25 50 75 100 125 150 175
T , JUNCTION TEM PERATURE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature.
3500
2000
1500
1000
500
Ciss
Coss
200
100
0 .1
f = 1 MHz
VGS = 0V
Crss
0 .5 1
5
VDS , DRAIN TO SOURCE VOLTAGE (V)
10
20
Figure 9. Capacitance Characteristics.
20
VGS =0V
5
1
0 .5
0 .1
0.01
TJ = 125°C
25°C
-5 5 ° C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD , BODY DIODE FORW A RD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
1 .2
8
ID = 35A
6
4
VDS = 10V
15V
20V
2
0
0 8 16 24 32
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
40
VIN
VGEN
R GEN
G
RGS
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE W IDTH
Figure 12. Switching Waveforms.
NDP6020 Rev.C
5 Page 
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NDB6020.PDF ] | |
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