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NDB6030L PDF даташит

Спецификация NDB6030L изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDB6030L
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDB6030L Даташит, Описание, Даташиты
June 1996
NDP6030L / NDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters
and high efficiency switching circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
52 A, 30 V. RDS(ON) = 0.0135 @ VGS=10 V
RDS(ON) = 0.020 @ VGS=4.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP6030L
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
30
± 16
52
156
75
0.5
-65 to 175
275
NDB6030L
2
62.5
© 1998 Fairchild Semiconductor Corporation
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
NDP6030L Rev.E









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NDB6030L Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 52 A
IAR Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VGS = 16 V, VDS = 0 V
VGS = -16 V, VDS = 0 V
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 26 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS = 4.5 V, ID = 21 A
VGS = 10 V, VDS = 10 V
VGS = 4.5 V, VDS = 10 V
VDS = 10 V, ID = 26 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Min Typ Max Units
100 mJ
52 A
30
TJ = 125oC
V
10 µA
1 mA
100 nA
-100 nA
TJ = 125oC
TJ = 125oC
1 1.6
3
0.7 1
2.2
0.011 0.0135
0.017 0.024
0.018 0.02
60
15
32
V
A
S
1350
800
300
pF
pF
pF
NDP6030L Rev.E









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NDB6030L Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
VDD = 15 V, ID = 52 A,
VGS = 10 V, RGEN = 24 Ω
VDS= 10 V
ID = 52 A , VGS =10 V
IS Maximum Continuos Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 26 A (Note 1)
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min Typ Max Units
8 16
130 250
45 90
108 200
44 60
6
14
nS
nS
nS
nS
nC
nC
nC
TJ = 125°C
52
120
0.93 1.3
0.85 1.2
A
A
V
NDP6030L Rev.E










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