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PDF NDB603AL Data sheet ( Hoja de datos )
| Número de pieza | NDB603AL | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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January 1996
NDP603AL / NDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP603AL
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
30
± 20
25 (Note 1)
100
50
0.4
-65 to 175
275
NDB603AL
2.5
62.5
© 1997 Fairchild Semiconductor Corporation
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
NDP603AL.SAM
1 page  
Typical Electrical Characteristics (continued)
25
TJ = -55°C
20
25°C
15
125°C
10
5
V DS = 10V
0
0 10 20 30 40
I , DRAIN CURRENT (A)
D
Figure 13. Transconductance Variation with Drain
Current and Temperature
40
20
10
VGS = 0V
5
2
1
TJ = 125°C
0.5
0.2
0.1
25°C
-55°C
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 14. Body Diode Forward Voltage
Variation with Current and Temperature
150
100
50
20
RDS(ON) Limit
10
5
V GS = 20V
2 SINGLE PULSE
1 TC = 25°C
1ms
10ms
1s 100ms
DC
0.5
0.1
0.5 1
2
5 10
VDS , DRAIN-SOURCE VOLTAGE(V)
Figure 15. Maximum Safe Operating Area
30 50
1
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.05 0.02
0.03 0.01
0.02
Single Pulse
0.01
0.01
0.1 1
10
t1 ,TIME (ms)
Figure 16. Transient Thermal Response Curve
R θJC (t) = r(t) * RθJC
R θJC = 2.5 °C/W
P(pk)
t1
t2
TJ - T C = P * R θJC (t)
Duty Cycle, D = t1 /t2
100
1000
NDP603AL.SAM
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet NDB603AL.PDF ] | |
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