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PDF NDB6060 Data sheet ( Hoja de datos )
| Número de pieza | NDB6060 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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March 1996
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
48A, 60V. RDS(ON) = 0.025Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP6060
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID
Drain Current - Continuous
Tc=25oC
- Continuous
TC=100oC
- Pulsed
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
60
60
± 20
± 40
48
32
144
100
0.67
-65 to 175
275
NDB6060
Units
V
V
V
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP6060 Rev. B1 / NDB6060 Rev. C
1 page  
Typical Electrical Characteristics (continued)
1.15
ID = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature
60
VGS = 0V
10
1 TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0.2
0.4 0.6 0.8 1 1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
3000
2000
1000
Ciss
Coss
500
300
200
100
1
f = 1 MHz
VGS = 0V
Crss
23
5
10 20
VDS , DRAIN TO SOURCE VOLTAGE (V)
30
50
Figure 9. Capacitance Characteristics
20
ID = 48A
15
10
VDS = 12V
48V
24V
5
0
0 20 40 60
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics
80
VIN
VG S
RGEN
G
VDD
RL
D
VOUT
DUT
S
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDP6060 Rev. B1 / NDB6060 Rev. C
5 Page 
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NDB6060.PDF ] | |
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