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NDB7052L PDF даташит

Спецификация NDB7052L изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDB7052L
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDB7052L Даташит, Описание, Даташиты
May 1997
NDP7052L / NDB7052L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
75 A, 50 V. RDS(ON) = 0.010 @ VGS= 5 V
RDS(ON) = 0.0075 @ VGS= 10 V.
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7052L
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
50
50
±16
±25
75
225
150
1
-65 to 175
NDB7052L
1
62.5
Units
V
V
V
A
W
W/°C
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDP7052L Rev.B1









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NDB7052L Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note)
W DSS
Single Pulse Drain-Source Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
VDD = 25 V, ID = 75 A
BVDSS
BVDSS/TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note)
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 o C
VDS = 48 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
TJ = 125°C
VGS = -16 V, VDS = 0 V
VGS(th)/TJ
VGS(th)
Gate Threshold VoltageTemp.Coefficient
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
ID = 250 µA, Referenced to 25 o C
VDS = VGS, ID = 250 µA
VGS = 5 V, ID = 37.5 A
TJ = 125°C
TJ = 150°C
VGS = 10 V, ID = 37.5 A
VGS = 5 V, VDS = 10 V
VDS = 5 V, ID = 37.5 A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
VDD = 25 V, ID = 37.5 A,
VGS = 5 V, RGEN = 10
RGS = 10
VDS= 24 V
ID = 75 A , VGS = 5 V
IS Maximum Continuos Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 37.5 A (Note)
trr Reverse Recovery Time
Irr Reverse Recovery Current
VGS = 0 V, IF = 37.5 A
dIF/dt = 100 A/µs
Note:
Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min Typ Max Unit
550 mJ
75 A
50
0.075
V
V/oC
250 µA
1 mA
100 nA
-100 nA
-0.005
V/oC
1 1.3
2V
0.8 0.85 1.6
0.0085 0.01
0.014 0.018
0.0065 0.0075
60
69
A
S
4030
1260
450
pF
pF
pF
25 50 nS
215 400 nS
110 200 nS
170 300 nS
92 130 nC
15 nC
45 nC
75 A
180 A
0.9 1.3 V
40 150 ns
2 10 A
NDP7052L Rev.B1









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NDB7052L Даташит, Описание, Даташиты
Typical Electrical Characteristics
100
VGS = 10V 6.0
5.0
80 3.5
60 3.0
40
2.5
20
0
0 0.5 1 1.5 2 2.5
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
3
2
ID = 37.5A
1.75
V GS = 5V
1.5
1.25
1
0.75
0.5
-50
-25
0 25 50 75 100 125 150 175
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
60
VDS = 5V
50
40
TJ = -55°C
25°C
125°C
30
20
10
0
1 1.5 2 2.5 3 3.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.8
1.6 V GS = 3.0V
1.4
3.5
1.2 4.0
4.5
1 5.0
6.0
0.8 10
0.6
0
20 40 60 80
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
100
0.08
25°C
0.06
125°C
0.04
ID=37.5A
0.02
0
2 2.5 3 3.5 4 4.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
5
60
20 V GS = 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature.
NDP7052L Rev.B1










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