NDB7060 PDF даташит
Спецификация NDB7060 изготовлена «Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | NDB7060 |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | Fairchild |
логотип |
12 Pages
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May 1996
NDP7060 / NDB7060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
75A, 60V. RDS(ON) = 0.013Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7060
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
60
60
± 20
± 40
75
225
150
1
-65 to 175
275
NDB7060
Units
V
V
V
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP7060.SAM
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Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 75 A
IAR Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
RDS(ON) Static Drain-Source On-Resistance
VGS = 10 V, ID = 40 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 37.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 30 V, ID = 75 A,
VGS = 10 V, RGEN = 5 Ω
VDS = 48 V,
ID = 75 A, VGS = 10 V
Min Typ Max Units
550 mJ
75 A
60
TJ = 125°C
V
250 µA
1 mA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
2 2.8
4
1.4 2.1 3.6
0.01 0.013
0.015 0.024
75
15 39
V
Ω
A
S
2960
1130
380
3600
1600
800
pF
pF
pF
17 30
128 400
54 80
90 200
100 115
14.5
51
nS
nS
nS
nS
nC
nC
nC
NDP7060.SAM
No Preview Available ! |
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 37.5 A (Note 1)
TJ = 125°C
trr Reverse Recovery Time
VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs
Irr Reverse Recovery Current
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
40
2
Typ Max
75
225
0.9 1.3
0.84 1.2
76 150
4.7 10
1
62.5
Units
A
A
V
ns
A
°C/W
°C/W
NDP7060.SAM
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