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NDB7060 PDF даташит

Спецификация NDB7060 изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDB7060
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDB7060 Даташит, Описание, Даташиты
May 1996
NDP7060 / NDB7060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
75A, 60V. RDS(ON) = 0.013@ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7060
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
60
60
± 20
± 40
75
225
150
1
-65 to 175
275
NDB7060
Units
V
V
V
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP7060.SAM









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NDB7060 Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 75 A
IAR Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
RDS(ON) Static Drain-Source On-Resistance
VGS = 10 V, ID = 40 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 37.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 30 V, ID = 75 A,
VGS = 10 V, RGEN = 5
VDS = 48 V,
ID = 75 A, VGS = 10 V
Min Typ Max Units
550 mJ
75 A
60
TJ = 125°C
V
250 µA
1 mA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
2 2.8
4
1.4 2.1 3.6
0.01 0.013
0.015 0.024
75
15 39
V
A
S
2960
1130
380
3600
1600
800
pF
pF
pF
17 30
128 400
54 80
90 200
100 115
14.5
51
nS
nS
nS
nS
nC
nC
nC
NDP7060.SAM









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NDB7060 Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 37.5 A (Note 1)
TJ = 125°C
trr Reverse Recovery Time
VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs
Irr Reverse Recovery Current
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
40
2
Typ Max
75
225
0.9 1.3
0.84 1.2
76 150
4.7 10
1
62.5
Units
A
A
V
ns
A
°C/W
°C/W
NDP7060.SAM










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