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NDB7061 PDF даташит

Спецификация NDB7061 изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDB7061
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDB7061 Даташит, Описание, Даташиты
May 1996
NDP7061 / NDB7061
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
64A, 60V. RDS(ON) = 0.016@ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
superior switching performance, and withstand high energy
Rugged internal source-drain diode can eliminate the need
pulses in the avalanche and commutation modes. These
for an external Zener diode transient suppressor.
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
175°C maximum junction temperature rating.
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7061
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
60
60
± 20
± 40
64
190
130
0.87
-65 to 175
275
NDB7061
Units
V
V
V
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP7061 Rev. C / NDB7061 Rev. D









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NDB7061 Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 30 V, ID = 64 A
IAR Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 48 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
RDS(ON) Static Drain-Source On-Resistance
VGS = 10 V, ID = 35 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 35 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 25 V, ID = 64 A,
VGS = 10 V, RGEN = 5
VDS = 48 V,
ID = 64 A, VGS = 10 V
Min Typ
Max Units
500 mJ
64 A
60
TJ = 125°C
V
10 µA
1 mA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
2 2.9
4
1.4 2.2 3.6
0.013 0.016
0.021 0.032
60
30
V
A
S
1930
870
310
pF
pF
pF
13 30
98 200
36 80
65 150
67 100
11
37.5
nS
nS
nS
nS
nC
nC
nC
NDP7061 Rev. C / NDB7061 Rev. D









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NDB7061 Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 35 A (Note 1)
TJ = 125°C
trr Reverse Recovery Time
VGS = 0 V, IF = 64 A, dIF/dt = 100 A/µs
Irr Reverse Recovery Current
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
40
2
Typ
0.9
0.8
105
4.5
Max
64
190
1.3
1.2
150
10
1.15
62.5
Units
A
A
V
ns
A
°C/W
°C/W
NDP7061 Rev. C / NDB7061 Rev. D










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