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NDB710B PDF даташит

Спецификация NDB710B изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDB710B
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDB710B Даташит, Описание, Даташиты
May 1994
NDP710A / NDP710AE / NDP710B / NDP710BE
NDB710A / NDB710AE / NDB710B / NDB710BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
42 and 40A, 100V. RDS(ON) = 0.038 and 0.042.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP710A NDP710AE
NDB710A NDB710AE
NDP710B NDP710BE
NDB710B NDB710BE
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
100
100
±20
±40
42 40
168 160
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
150
1
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
Units
V
V
V
V
A
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP710.SAM









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NDB710B Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
EAS Single Pulse Drain-Source VDD = 25 V, ID = 42 A
Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
Type Min Typ Max Units
NDP710AE
NDP710BE
NDB710AE
NDB710BE
700 mJ
42 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 µA
ALL 100
V
IDSS Zero Gate Voltage Drain
Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VDS = 100 V,
VGS = 0 V
TJ = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ALL
ALL
ALL
250 µA
1 mA
100 nA
-100 nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
VDS = VGS,
ID = 250 µA
TJ = 125°C
ALL
2 2.9
1.4 2.2
4
3.6
VGS = 10 V,
ID = 21 A
TJ = 125°C
NDP710A
NDP710AE
NDB710A
NDB710AE
0.026 0.038
0.044 0.08
VGS = 10 V,
ID = 20 A
TJ = 125°C
NDP710B
NDP710BE
NDB710B
NDB710BE
0.042
0.09
VGS = 10 V, VDS = 10 V
NDP710A
NDP710AE
NDB710A
NDB710AE
42
V
V
A
NDP710B
NDP710BE
NDB710B
NDB710BE
40
A
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10 V, ID = 21 A
ALL 20 28
S
Ciss Input Capacitance
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
ALL 2840 3600 pF
ALL 550 700 pF
ALL 175 200 pF
NDP710.SAM









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NDB710B Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn - On Delay Time
tr Turn - On Rise Time
VDD = 50 V, ID = 42 A,
VGS = 10 V, RGEN = 5
tD(OFF)
Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 80 V,
ID = 42 A, VGS = 10V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
ALL 15 25 nS
ALL 111 180 nS
ALL 55 90 nS
ALL 81 130 nS
ALL 92 130 nC
ALL 15 nC
ALL 44 nC
IS Maximum Continuos Drain-Source Diode Forward Current
NDP710A
NDP710AE
NDB710A
NDB710AE
42 A
NDP710B
NDP710BE
NDB710B
NDB710BE
40 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
NDP710A
NDP710AE
NDB710A
NDB710AE
168 A
NDP710B
NDP710BE
NDB710B
NDB710BE
160 A
VSD Drain-Source Diode Forward
(Note 2) Voltage
trr Reverse Recovery Time
Irr Reverse Recovery Current
THERMAL CHARACTERISTICS
VGS = 0 V,
IS = 21 A
VGS = 0 V, IS = 42 A,
dIS/dt = 100 A/µs
TJ = 125°C
ALL
ALL
ALL
0.89 1.3
0.69 1.2
128 180
8.7 13
V
V
ns
A
RθJC
Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Notes:
1. NDP710A/710B and NDB710A/710B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
ALL
ALL
1 °C/W
62.5 °C/W
NDP710.SAM










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