|
|
Datasheet NDH8301N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NDH8301N | Dual N-Channel Enhancement Mode Field Effect Transistor December 1996
NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to |  Fairchild | transistor |
NDH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NDH8301N | Dual N-Channel Enhancement Mode Field Effect Transistor December 1996
NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to Fairchild transistor | | |
| 2 | NDH8303N | Dual N-Channel Enhancement Mode Field Effect Transistor May 1997
NDH8303N Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored Fairchild transistor | | |
| 3 | NDH8304 | Dual P-Channel Enhancement Mode Field Effect Transistor May 1997
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored Fairchild transistor | | |
| 4 | NDH8304P | Dual P-Channel Enhancement Mode Field Effect Transistor May 1997
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored Fairchild transistor | | |
| 5 | NDH831N | N-Channel Enhancement Mode Field Effect Transistor July 1996
NDH831N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize Fairchild transistor | | |
| 6 | NDH8320C | Dual N & P-Channel Enhancement Mode Field Effect Transistor December 1996
NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is espec Fairchild transistor | | |
| 7 | NDH8321C | Dual N & P-Channel Enhancement Mode Field Effect Transistor January 1999
NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especi Fairchild transistor | |
| Esta página es del resultado de búsqueda del NDH8301N. Si pulsa el resultado de búsqueda de NDH8301N se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |