|
|
PDF NDH832P Data sheet ( Hoja de datos )
| Número de pieza | NDH832P | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDH832P (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
June 1996
NDH832P
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-4.2A, -20V. RDS(ON) = 0.06Ω @ VGS = -4.5V
RDS(ON) = 0.08Ω @ VGS = -2.7V.
High density cell design for extremely low RDS(ON).
Enhanced SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDH832P
-20
-8
-4.2
-15
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
NDH832P Rev. B2
1 page  
Typical Electrical Characteristics
1.1
I D = -250µA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0
25 50 75 100 125 150
T J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
20
10
VGS = 0V
2
1
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
2500
2000
1000
500
300
200
100
0.1
C iss
C oss
f = 1 MHz
VGS = 0V
C rss
0.2
0.5 1
2
5 10
-V DS , DRAIN TO SOURCE VOLTAGE (V)
20
Figure 9. Capacitance Characteristics.
5
I D = -4.2A
4
VDS = -5.0V -10V
-15V
3
2
1
0
0 5 10 15 20
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
25
20
VDS = -10V
15
10
TJ = -55°C
25°C
125°C
5
0
0 -4 -8 -12 -16 -20
ID , DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDH832P Rev. B2
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NDH832P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDH8320C | Dual N & P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| NDH8321C | Dual N & P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| NDH832P | P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |