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PDF NDH8447 Data sheet ( Hoja de datos )
| Número de pieza | NDH8447 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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May 1996
NDH8447
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-4.4A, -30V. RDS(ON) = 0.053 @ VGS = -10V
RDS(ON) = 0.095Ω @ VGS = -4.5V
High density cell design for extremely low RDS(ON).
Enhanced SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
____________________________________________________________________________________________
SuperSOTTM-8
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
54
63
72
81
NDH8447
-30
-20
-4.4
-20
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
NDH8447 Rev. C1
1 page  
Typical Electrical Characteristics (continued)
1.1
I D = -250µA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
2000
1000
500
300
200
100
50
0.1
C iss
C oss
f = 1 MHz
VGS = 0V
C rss
0.2
0.5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 9. Capacitance Characteristics.
20
10 VGS = 0V
5
1
0.5
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.2
0.4 0.6 0.8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
10
I D = -4.4A
8
6
VDS = -5.0V
-10V
-15V
4
2
0
0 4 8 12 16
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
20
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE W IDTH
INVERTED
Figure 12. Switching Waveforms.
NDH8447 Rev. C1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NDH8447.PDF ] | |
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