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NDH8503N PDF даташит

Спецификация NDH8503N изготовлена ​​​​«Fairchild» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDH8503N
Описание Dual N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDH8503N Даташит, Описание, Даташиты
NDH8503N
Dual N-Channel Enhancement Mode Field Effect Transistor
May 1997
General Description
SuperSOTTM-8 N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management,
and other battery powered circuits where fast switching, and
low in-line power loss are needed in a very small outline surface
mount package.
Features
3.8 A, 30 V. RDS(ON) = 0.033 @ VGS = 10 V
RDS(ON) = 0.05 @ VGS = 4.5 V.
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
PD Maximum Power Dissipation
(Note 1 )
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
NDH8503N
30
±20
3.8
10.5
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8503N Rev.C









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NDH8503N Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 3.8 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = 4.5 V, ID = 3.2 A
VGS = 10 V, VDS = 5 V
VGS = 4.5 V, VDS = 5 V
VDS = 5 V, ID = 3.8 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VDD = 10 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 10 V,
ID = 3.8 A, VGS = 4.5 V
Min Typ Max Units
30
TJ = 55oC
V
1 µA
10 µA
100 nA
-100 nA
1 1.67
2
TJ = 125oC 0.8 1.04
1.6
0.027 0.033
TJ = 125oC
0.04 0.06
0.041 0.05
10.5
9
9
V
A
S
500 pF
310 pF
125 pF
10 18 ns
15 28 ns
20 35 ns
9 18 ns
18 25 nC
1.8 nC
4.2 nC
NDH8503N Rev.C









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NDH8503N Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.67 A (Note 2)
0.67
0.72 1.2
A
V
otes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
( ) = = = ( ) ×PD t
TJ TA
R θJA(t )
TJ TA
R θJC+RθCA(t )
I
2
D
t
RDS(ON ) TJ
Typical RθJA for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH8503N Rev.C










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Номер в каталогеОписаниеПроизводители
NDH8503NDual N-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild

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