DataSheet26.com

NDH8520C PDF даташит

Спецификация NDH8520C изготовлена ​​​​«Fairchild» и имеет функцию, называемую «Dual N & P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDH8520C
Описание Dual N & P-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

12 Pages
scroll

No Preview Available !

NDH8520C Даташит, Описание, Даташиты
December 1996
NDH8520C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
N-Channel 2.8 A, 30 V,RDS(ON)=0.07@ VGS=10 V
RDS(ON)=0.1@ VGS=4.5 V P-Channel -2.2 A,-30 V,
RDS(ON)=0.11@ VGS=-10 V
RDS(ON)=0.18 @ VGS=-4.5 V.
Proprietary SuperSOTTM-8 package design using copper lead
frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
___________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
30
±20
2.8
10
PD Power Dissipation for Single Operation
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1)
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
0.8
-55 to 150
156
40
P-Channel
-30
±20
-2.2
-10
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8520C Rev.B









No Preview Available !

NDH8520C Даташит, Описание, Даташиты
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 2.8 A
VGS = 4.5 V, ID = 2.3 A
VGS = -10 V, ID = -2.2 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS = -4.5 V, ID = -1.7 A
VGS = 10 V, VDS = 5 V
VGS = 4.5 V, VDS = 5 V
VGS = -10 V, VDS = -5 V
VGS = -4.5 V, VDS = -5 V
VDS = 10 V, ID = 2.8 A
VDS = -10 V, ID = -2.2 A
N-Channel
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
P-Channel
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
Type Min Typ Max Units
TJ = 55oC
TJ = 55oC
N-Ch
P-Ch
N-Ch
30
-30
P-Ch
All
All
V
V
1 µA
10 µA
-1 µA
-10 µA
100 nA
-100 nA
N-Ch 1
1.6 2.8
TJ = 125oC
0.8 1.2
2
P-Ch -1 -1.5
-3
TJ = 125oC
-0.8 -1.2 -2.2
N-Ch
0.05 0.07
TJ = 125oC
0.07 0.125
0.077 0.1
TJ = 125oC
P-Ch
0.1 0.11
0.14 0.2
0.17 0.18
N-Ch 10
3
P-Ch -10
-4
N-Ch
5.8
P-Ch
3.8
V
A
S
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
270
340
170
218
55
100
pF
pF
pF
NDH8520C Rev.B









No Preview Available !

NDH8520C Даташит, Описание, Даташиты
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
N-Channel
VDD = 10 V, ID = 1 A,
VGEN = 10 V, RGEN = 6
P-Channel
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
8 15 ns
8 15
15 28 ns
18 35
15 28 ns
28 50
tf Turn - Off Fall Time
N-Ch
P-Ch
5 10 ns
20 35
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS = 15 V,
ID = 2.8 A, VGS = 10 V
P-Channel
VDS = -15 V,
ID = -2.2 A, VGS = -10 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9.4 17
10.9 14.5
0.8
1.4
3
3.6
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
0.67
-0.67
A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.67 A (Note2)
VGS = 0 V, IS = -0.67 A (Note2)
N-Ch
P-Ch
0.7
-0.76
1.2
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
( ) = = = ( ) ×PD t
TJTA
RθJ A(t)
TJTA
RθJ C+RθCA(t)
I
2
D
t
RDS(ON)@TJ
Typical RθJA for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH8520C Rev.B










Скачать PDF:

[ NDH8520C.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NDH8520CDual N & P-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск