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PDF NDH8521C Data sheet ( Hoja de datos )
| Número de pieza | NDH8521C | |
| Descripción | Dual N & P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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May 1997
NDH8521C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
N-Ch 3.8 A, 30 V, RDS(ON)=0.033Ω @ VGS=10 V
RDS(ON)=0.05 Ω @ VGS=4.5 V
P-Ch -2.7 A, -30 V,RDS(ON)=0.07 Ω @ VGS=-10 V
RDS(ON)=0.115 Ω @ VGS=-4.5 V.
Proprietary SuperSOTTM-8 package design using copper lead
frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
30
±20
3.8
10.5
PD Power Dissipation for Single Operation (Note 1)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
0.8
-55 to 150
156
40
P-Channel
-30
±20
-2.7
-8
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8521C Rev.C
1 page  
Typical Electrical Characteristics: N-Channel (continued)
1.12
1.08
I = 250µA
D
1.04
1
0.96
0.92
-50
-25
0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
15
5 VGS =0V
1
0 .1
TJ = 125°C
25°C
-55°C
0 .0 1
0 .0 0 1
0 .0 0 0 1
0
0 .2 0 .4 0.6 0 .8
1
V SD, BODY DIODE FORWARD VOLTAGE (V)
1 .2
Figure 7. N-Channel Breakdown Voltage Variation
with Temperature.
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature.
1500
1000
800
500
300
Ciss
Coss
200
100
50
0 .1
f = 1 MHz
VGS = 0V
Crss
0 .2 0 .5 1
35
10
V , DRAIN TO SOURCE VOLTAGE (V)
DS
30
Figure 9. N-Channel Capacitance Characteristics.
20
VDS = 5V
16
12
8
TJ = -55°C
25°C
125°C
4
0
0 4 8 12 16 20
I , DRAIN CURRENT (A)
D
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
10
ID = 3.8A
8
6
VDS = 10V
20V
15V
4
2
0
0 5 10 15 20
Q g , GATE CHARGE (nC)
Figure 10. N-Channel Gate Charge Characteristics.
NDH8521C Rev.C
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NDH8521C.PDF ] | |
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