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PDF NDH853N Data sheet ( Hoja de datos )
| Número de pieza | NDH853N | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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NDH853N
N-Channel Enhancement Mode Field Effect Transistor
May 1997
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as battery powered
circuits or portable electronics where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V
RDS(ON) = 0.025 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
Proprietary SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
NDH853N
30
±20
7.6
23
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH853N Rev. C
1 page  
Typical Electrical Characteristics (continued)
1.1
1.08
I D = 250µA
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
3000
2000
1000
500
C iss
C oss
300
200
100
0 .1
f = 1 MHz
VGS = 0V
0 .2
0 .5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
C rss
20 30
Figure 9. Capacitance Characteristics.
30
10 V GS = 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
10
ID = 7.6A
8
6
4
V DS = 10V
20V
15V
2
0
0 10 20 30 40
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDH853N Rev. C
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDH853N.PDF ] | |
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