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NDL5531PC PDF даташит

Спецификация NDL5531PC изготовлена ​​​​«NEC» и имеет функцию, называемую «1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE».

Детали детали

Номер произв NDL5531PC
Описание 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE
Производители NEC
логотип NEC логотип 

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NDL5531PC Даташит, Описание, Даташиты
DATA SHEET
PHOTO DIODE
NDL5531P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors
of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm.
FEATURES
Small dark current
ID = 5 nA
Small terminal capacitance
Ct = 0.35 pF @ 0.9 V(BR)R
High quantum efficiency
η = 90 % @ λ = 1 300 nm, M = 1
η = 77 % @ λ = 1 550 nm, M = 1
High speed response
fC = 2.5 G H z @ M = 10
Detecting area size
φ3 0 µm
Coaxial module with single mode fiber (SM-9/125)
PACKAGE DIMENSIONS
in millimeters
NDL5531P
Optical Fiber:
SM-9/125
Length: 1 m MIN.
NDL5531P1
Optical Fiber:
SM-9/125
Length: 1 m MIN.
Shrunk tube
Shrunk tube
NDL5531P2
Optical Fiber:
SM-9/125
Length: 1 m MIN.
Shrunk tube
φ 2.5
φ 6.0+–00..10
φ2.5
14.0±0.1
φ
6.0
+0.0
–0.1
φ2.5
φ
6.0
+0.0
–0.1
φ 0.45
2–φ2.2
231
231
φ 2.0
φ 2.0
18.0±0.1
PIN CONNECTIONS
1 Anode (Negative)
3
2 Cathode (Positive) 2 1
3 Case
The information in this document is subject to change without notice.
Document No. P11352EJ2V0DS00 (2nd edition)
Date Published July 1996 P
Printed in Japan
The mark shows major revised points.
231
2–φ2.5
φ 2.0
12.0±0.1
16.0±0.2
© 1996









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NDL5531PC Даташит, Описание, Даташиты
NDL5531P Series
ORDERING INFORMATION
Part Number
NDL5531P
NDL5531PC
NDL5531PD
NDL5531P1
NDL5531P1C
NDL5531P1D
NDL5531P2
NDL5531P2C
NDL5531P2D
Available Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Description
No Flange
Flat Mount Flange
Vertical Flange
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)
Parameter
Forward Current
Reverse Current
Operating Case Temperature
Storage Temperature
Symbol
IF
IR
TC
Tstg
Ratings
10
0.5
40 to +85
40 to +85
Unit
mA
mA
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
Multiplied Dark Current
Terminal Capacitance
Cut-off Frequency
Quantum Efficiency
Responsivity
Multiplication Factor
Excess Noise Factor*2
Symbol
V(BR)R
δ*1
Conditions
ID = 100 µ A
ID VR = V(BR)R × 0.9
IDM M = 2 to 10
Ct VR = V(BR)R × 0.9, f = 1 MHz
fC M = 10
η λ = 1 300 nm, M = 1
λ = 1 550 nm, M = 1
S λ = 1 300 nm, M = 1
λ = 1 550 nm, M = 1
M λ = 1 300 nm, Ipo = 1.0 µA
VR = V (@ ID = 1 µ A )
x λ = 1 300 nm, 1 550 nm, Ipo = 1.0 µA
F M = 10, f = 35 MHz, B = 1 MHz
*1 δ =
V(BR)R < 25 °C + T °C > −V(BR)R < 25 °C >
T °C V(BR)R < 25 °C >
*2 F = MX
MIN.
50
2.5
76
65
0.80
0.81
30
TYP.
70
0.2
5
1
0.35
90
77
0.94
0.96
40
0.7
5
MAX.
100
25
5
0.60
Unit
V
%/°C
nA
nA
pF
GHz
%
A/W
2









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NDL5531PC Даташит, Описание, Даташиты
NDL5531P Series
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
80
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
λ = 1 300 nm
60
0
40
20
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
Wavelength λ (µ m)
–10
–60 –40 –20 0 20 40 60 80 100
Case Temperature TC (˚C)
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
10–3 λ = 1 300 nm
Ipo = 1.0 µA
10–4
10–5
Iph
10–6
10–7
DARK CURRENT vs.
REVERSE VOLTAGE
10–6
10–7
10–8
10–9
10–10
0
TC = 85 ˚C
TC = 65 ˚C
TC = 25 ˚C
TC = –20 ˚C
20 40 60 80
Reverse Voltage VR (V)
100
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
103
10–8
10–9
ID
10–10
0
20 40 60 80
Reverse Voltage VR (V)
100
102
101
100
0
TC = 65 ˚C
TC = –20 ˚C
TC = 25 ˚C
TC = 85 ˚C
20 40 60 80
Reverse Voltage VR (V)
100
3










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