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NDL5551P2C PDF даташит

Спецификация NDL5551P2C изготовлена ​​​​«NEC» и имеет функцию, называемую «1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE».

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Номер произв NDL5551P2C
Описание 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE
Производители NEC
логотип NEC логотип 

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NDL5551P2C Даташит, Описание, Даташиты
DATA SHEET
PHOTO DIODE
NDL5551P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ50 µm InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5551P Series is InGaAs avalanche photo diode modules with multimode fiber. They are designed for
detectors of long wavelength transmission systems and cover the wavelength range between 1 000 and 1 600 nm.
FEATURES
Smaller dark current
ID = 5 nA
High quantum efficiency
η = 90 % @ λ = 1 300 nm, M = 1
η = 77 % @ λ = 1 550 nm, M = 1
High Speed response
fC = 1.2 G H z @M = 20
Detecting area size
φ 5 0 µm
Coaxial module with multimode fiber (GI-50/125)
NDL5551P1 and NDL5551P2 have a flange.
PACKAGE DIMENSIONS
in millimeters
NDL5551P
Optical Fiber:
GI-50/125
Length: 1 m MIN.
NDL5551P1
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Shrunk tube
Shrunk tube
NDL5551P2
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Shrunk tube
φ 2.5
φ 6.0+–00..10
φ 0.45
231
φ 2.0
φ2.5
14.0±0.1
φ
6.0
+0.0
–0.1
2–φ2.2
231
φ 2.0
18.0±0.1
LEAD CONNECTION
1 Anode (Negative)
3
2 Cathode (Positive) 2 1
3 Case
φ2.5
φ
6.0
+0.0
–0.1
231
2–φ2.5
φ 2.0
12.0±0.1
16.0±0.2
The information in this document is subject to change without notice.
Document No. P11103EJ2V0DS00 (2nd edition)
(Previous No. LD-2371)
Date Published March 1996 P
Printed in Japan
The mark shows major revised points.
©
1994









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NDL5551P2C Даташит, Описание, Даташиты
NDL5551P Series
ORDERING INFORMATION
Part Number
NDL5551P
NDL5551PC
NDL5551PD
NDL5551P1
NDL5551P1C
NDL5551P1D
NDL5551P2
NDL5551P2C
NDL5551P2D
Available Connector
Without Connector
no flange
With FC-PC Connector
With SC-PC Connector
Without Connector
flat mount flange
With FC-PC Connector
With SC-PC Connector
Without Connector
vertical flange
With FC-PC Connector
With SC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C)
Parameter
Forward Current
Reverse Current
Operating Case Temperature
Storage Temperature
Symbol
IF
IR
TC
Tstg
Ratings
10
0.5
40 to +85
40 to +85
Unit
mA
mA
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
Multiplied Dark Current
Terminal Capacitance
Cut-off Frequency
Quantum Efficiency
Responsivity
Multiplication Factor
Excess Noise Exponent
Excess Noise Factor
Symbol
V(BR)R
δ*1
Conditions
ID = 100 µ A
ID VR = V(BR)R × 0.9
IDM M = 2 to 10
Ct VR = V(BR)R × 0.9, f = 1 MHz
fC M = 10
M = 20
η λ = 1 300 nm, M = 1
λ = 1 550 nm, M = 1
S λ = 1 300 nm, M = 1
λ = 1 550 nm, M = 1
M λ = 1 300 nm, IP0 = 1.0 µA
VR = V (@ ID = 1 µ A )
x λ = 1 300 nm, 1550 nm, IP0 = 1.0 µA
F M = 10, f = 35 MHz, B = 1 MHz
*1: δ =
V(BR)R < 25 °C + T °C > −V(BR)R < 25 °C >
T °C V(BR)R < 25 °C >
MIN.
50
1
76
65
0.8
0.81
30
TYP.
70
0.2
5
1
0.4
1.5
1.2
90
77
0.94
0.96
40
0.7
5
MAX.
100
Unit
V
%/°C
30
5
0.75
nA
nA
pF
GHz
%
A/W
2









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NDL5551P2C Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
TC = 25 ˚C
80
60
40
20
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
Wavelength λ (µ m)
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
10–3 λ = 1 300 nm
IP0 = 1.0 µA
TC = 25 ˚C
10–4
10–5
Iph
10–6
10–7
10–8
10–9
ID
10–10
0
20 40 60 80
Reverse Voltage VR (V)
100
NDL5551P Series
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
λ = 1 300 nm
0
–10
–60 –40 –20 0 20 40 60 80 100
Operating Case Temperature TC (˚C)
DARK CURRENT vs.
REVERSE VOLTAGE
10–6
10–7
10–8
10–9
10–10
0
TC = 85 ˚C
TC = 65 ˚C
TC = 25 ˚C
TC = –20 ˚C
20 40 60 80
Reverse Voltage VR (V)
100
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
103
102
101
100
0
TC = 65 ˚C
TC = –20 ˚C
TC = 25 ˚C
TC = 85 ˚C
20 40 60 80
Reverse Voltage VR (V)
100
3










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