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PDF NDM3001 Data sheet ( Hoja de datos )
| Número de pieza | NDM3001 | |
| Descripción | 3 Phase Brushless Motor Driver | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NDM3001 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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February 1997
NDM3001
3 Phase Brushless Motor Driver
General Description
The NDM3001 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
Features
±2.9 A, ±30 V, 2.5W
High density cell design for extremely low RDS(ON).
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
________________________________________________________________________________
11,14
10
12
15
1,16
4,13
8,9
2
5
7
3,6
Q1 Q3 Q5
Q2 Q4 Q6
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage (All Types)
VGSS Gate-Source Voltage (All Types)
ID Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -
Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
- Pulsed
(Note 1a & 2)
PD Total Power Dissipation
(Note 1a)
Q1+Q4 or Q1+Q6 or Q3+Q2 or (Note 1b)
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
NDM3001
±30
±20
±2.9
±10
2.5
1.6
1.4
-55 to 150
Units
V
V
A
W
°C
© 1997 Fairchild Semiconductor Corporation
NDM3001 Rev.C
1 page  
Typical Electrical Characteristics
2
V = 10 V
GS
1 .8
1 .6
1 .4
1 .2
1
0 .8
0 .6
0 .4
0
1
TJ = 125°C
25°C
-55°C
23
I , DRAIN CURRENT (A)
D
4
5
1.8
VGS = -10V
1.6
1.4
1.2
1
0.8
0.6
0
-1
TJ = 125°C
25°C
-55°C
-2 -3
I D , DRAIN CURRENT (A)
-4
-5
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
Figure 8. P-Channel On-Resistance Variation with
Drain Current and Temperature.
5
V DS =10V
4
3
2
T = -55°C
J
1 25°C
125°C
0
1 1.5 2 2.5 3 3.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 9. N-Channel Transfer
Characteristics.
4
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25
VDS = V GS
I D = 250µA
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 11. N-Channel Gate Threshold Variation with
Temperature.
-5
VDS = -10V
-4
TJ = -55°C 25°C
125°C
-3
-2
-1
0
-1 -2 -3 -4 -5
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 10. P-Channel Transfer
Characteristics.
1.2
VDS = V GS
1.1 ID =- 250µA
1
0.9
0.8
0.7
-50
-25
0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDM3001 Rev.C
5 Page 
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC-16 (FS PKG Code S3)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1437
October 1999, Rev. A1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NDM3001.PDF ] | |
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