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NDP5060 PDF даташит

Спецификация NDP5060 изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDP5060
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDP5060 Даташит, Описание, Даташиты
October 1996
NDP5060 / NDB5060
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
26 A, 60 V. RDS(ON) = 0.05 @ VGS= 10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise note
NDP5060
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
S
60
60
±20
±40
26
78
68
0.45
-65 to 175
NDB5060
Units
V
V
V
A
W
W/°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP5060 Rev.A









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NDP5060 Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 30 V, ID = 26 A
IAR Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
RDS(ON) Static Drain-Source On-Resistance
VGS = 10 V, ID = 13 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 13 A
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
VDD = 30 V, ID = 26 A,
VGS = 10 V, RGEN = 15
VDS = 24 V,
ID = 26 A, VGS = 10 V
Min Typ Max Units
100 mJ
26 A
60
TJ = 125°C
V
250 µA
1 mA
100 nA
-100 nA
2 2.9
4
TJ = 125°C 1.4 2.2
2.8
0.04 0.05
TJ = 125°C
0.07 0.08
26
9
V
A
S
630 pF
225 pF
70 pF
9 20 nS
95 200 nS
19 40 nS
48 100 nS
20 40 nC
5 nC
11 nC
NDP5060 Rev.A









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NDP5060 Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 13 A (Note 1)
trr Reverse Recovery Time
Irr Reverse Recovery Current
VGS = 0 V, IF = 26 A,
dIF/dt = 100 A/µs
THERMAL CHARACTERISTICS
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min Typ Max Units
26
78
0.9 1.3
54 120
2.1 8
A
A
V
ns
A
2.2 °C/W
62.5 °C/W
NDP5060 Rev.A










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