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NDP510A PDF даташит

Спецификация NDP510A изготовлена ​​​​«Fairchild» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв NDP510A
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители Fairchild
логотип Fairchild логотип 

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NDP510A Даташит, Описание, Даташиты
May 1994
NDP510A / NDP510AE / NDP510B / NDP510BE
NDB510A / NDB510AE / NDB510B / NDB510BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP510A NDP510AE
NDB510A NDB510AE
NDP510B NDP510BE
NDB510B NDB510BE
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
100
100
±20
±40
15 13
60 52
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
75
0.5
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
Units
V
V
V
V
A
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP510.SAM









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NDP510A Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
EAS Single Pulse Drain-Source VDD = 25 V, ID = 15 A
Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
Type Min Typ Max Units
NDP510AE
NDP510BE
NDB510AE
NDB510BE
65 mJ
15 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 µA
ALL 100
IDSS Zero Gate Voltage Drain
Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VDS = 100 V,
VGS = 0 V
TJ = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ALL
ALL
ALL
250
1
100
-100
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
VDS = VGS,
ID = 250 µA
TJ = 125°C
ALL
23
1.4 2.3
4
3.6
VGS = 10 V,
ID = 7.5 A
TJ = 125°C
NDP510A
NDP510AE
NDB510A
NDB510AE
0.088 0.12
0.16 0.24
VGS = 10 V,
ID = 6.5 A
TJ = 125°C
NDP510B
NDP510BE
NDB510B
NDB510BE
0.15
0.3
VGS = 10 V, VDS = 10 V
NDP510A
NDP510AE
NDB510A
NDB510AE
15
NDP510B
NDP510BE
NDB510B
NDB510BE
13
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10 V, ID = 7.5 A
ALL 6 8.6
Ciss Input Capacitance
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
ALL 740 900
ALL 160 180
ALL 40 50
V
µA
mA
nA
nA
V
V
A
A
S
pF
pF
pF
NDP510.SAM









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NDP510A Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn - On Delay Time
tr Turn - On Rise Time
VDD = 50 V, ID = 15 A,
VGS = 10 V, RGEN = 24
tD(OFF)
Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 80 V,
ID = 15 A, VGS = 10V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
ALL 10 20 nS
ALL 63 100 nS
ALL 49 80 nS
ALL 45 75 nS
ALL 22.5 30 nC
ALL 4.5 nC
ALL 10.5 nC
IS Maximum Continuos Drain-Source Diode Forward Current
NDP510A
NDP510AE
NDB510A
NDB510AE
15 A
NDP510B
NDP510BE
NDB510B
NDB510BE
13 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
NDP510A
NDP510AE
NDB510A
NDB510AE
60 A
NDP510B
NDP510BE
NDB510B
NDB510BE
52 A
VSD Drain-Source Diode Forward
(Note 2) Voltage
trr Reverse Recovery Time
Irr Reverse Recovery Current
THERMAL CHARACTERISTICS
VGS = 0 V,
IS = 7.5 A
VGS = 0 V, IS = 15 A,
dIS/dt = 100 A/µs
TJ = 125°C
ALL
ALL
ALL
0.89 1.3
0.85 1.2
98 140
6.8 10
V
V
ns
A
RθJC
Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Notes:
1. NDP510A/510B and NDB510A/510B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
ALL
ALL
2 °C/W
62.5 °C/W
NDP510.SAM










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